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參數資料
| 型號： | STGW30NB60HD |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT |
| 中文描述： | N溝道30A條- 600V到- 247 PowerMESH IGBT的 |
| 文件頁數： | 8/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | STGW30NB60HD |
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STGW30NB60HD
8/8
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| STGW50NB60M | N-CHANNEL 50A - 600V - TO-247 PowerMESH⑩ IGBT |
| STGY50NB60 | N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT |
| STGY50NB60HD | N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT |
| STH4N90 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGW30NC120HD | 功能描述:IGBT 晶體管 N-CHANNEL IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW30NC120HD_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT |
| STGW30NC120HD_0710 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT |
| STGW30NC60KD | 功能描述:IGBT 晶體管 30A 600v IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW30NC60VD | 功能描述:IGBT 晶體管 PowerMESH RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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