參數(shù)資料
型號: T431616E-7S
廠商: TM Technology, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100萬× 16內存為512k × 16Bit的X 2Banks同步DRAM
文件頁數(shù): 63/74頁
文件大?。?/td> 781K
代理商: T431616E-7S
TE
CH
tm
T431616D/E
TM Technology Inc. reserves the right
P. 63
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 19.1. Full Page Write Cycle
(Burst Length=Full Page, CAS# Latency=1)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
DQM
DQ
A11
DAx+1
DAx
Activate
Command
Bank A
Hi-Z
Activate
Command
Bank B
RAx
RAx
Burst Stop
Command
CBx
High
Write
Command
Bank B
Precharge
Command
Bank B
RBx
CAx
RBy
RBy
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Full Page burst operation does
not terminate when the burst
length is satisfied; the burst counter
increments and continues bursting
beginning with the starting address.
Activate
Command
Bank B
t
CK1
DAx+2 DAx+3 DAx-1
DAx
DAx+1
DBx
DBx+1DBx+2DBx+3DBx+4 DBx+5 DBx+6 DBx+7
Write
Command
Bank A
Data is ignored
RBx
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