參數(shù)資料
型號: T431616E-7SG
廠商: TM Technology, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100萬× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM
文件頁數(shù): 62/74頁
文件大小: 781K
代理商: T431616E-7SG
TE
CH
tm
T431616D/E
TM Technology Inc. reserves the right
P. 62
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 18.3. Full Page Read Cycle
(Burst Length=Full Page, CAS# Latency=3)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
DQM
DQ
A11
Activate
Command
Bank A
Ax
Ax+1
Bx
Bx+1
Bx+3
Bx+4
Hi-Z
Read
Command
Bank A
RAx
RAx
Ax+1Ax+2 Ax-2
Ax-1
Bx+2
Bx+5
Activate
Command
Bank B
Burst Stop
Command
CBx
High
Read
Command
Bank B
Precharge
Command
Bank B
RBx
CAx
RBy
RBy
Ax
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Full Page burst operation does not
terminate when the burst length is
satisfied; the burst counter
increments and continues
bursting beginning with the
starting address.
Activate
Command
Bank B
t
CK3
t
RP
RBx
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