參數(shù)資料
型號: T436416A
廠商: TM Technology, Inc.
英文描述: 4M X 16 SDRAM
中文描述: 4米× 16內(nèi)存
文件頁數(shù): 24/29頁
文件大小: 712K
代理商: T436416A
TE
CH
tm
Write Interrupted by Prechareg Command & Write Burst Stop Cycle @ Burst Length=Full Page
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T436416A
TM Technology Inc. reserves the right
P.24
to change products or specifications without notice.
Publication Date: MAY. 2003
Revision: B
C LO C K
C K E
C S
R A S
C A S
A D D R
B A
A 10/A P
D Q
W E
D Q M
10
11
12
13
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15
16
17
18
19
H IG H
:D on't care
R ow A ctive
(A -B ank)
W rite (A -
B ank)
B urst Stop
W rite (A -
B ank)
Precharge
(A -B ank)
R A a
C A a
C A b
R A a
D A a0
D A a1
D A a2
D A a3
D A a4
D A b0
D A b1
D A b2
D A b3
D A b4
D A b5
*N ote3
t
BD L
t
RD L
*Note : 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell.
It is defined by AC parameter of
t
RDL
.
DQM at write interrupted by precharge command is needed to prevent invalid write.
Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
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