參數(shù)資料
型號: TA2159F
廠商: Toshiba Corporation
英文描述: TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
中文描述: 東芝雙極線性集成電路硅單片
文件頁數(shù): 21/28頁
文件大小: 378K
代理商: TA2159F
TA2159F
2002-10-03
21
2. PLL microcontroller
(
Unless otherwise noted, Ta 25°C, V
DD
3.0 V)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
DD1
Under CPU operation (Note 4)
1.8
~
3.6
Range of operating supply voltage
V
DD2
Under PLL operation (Note 4)
1.8
~
3.6
V
Range of memory retention voltage
V
HD
Crystal oscillation stopped
(CKSTP instruction executed)
(Note 4)
0.75
~
3.6
V
I
DD1
PLL operation (LPF mode)
at input 15 MHz.
1.3
mA
I
DD2
Power OFF at transmission
mode (PLL OFF, CPU ON,
X’tal ON)
40
60
A
Range of operating supply voltage
I
DD3
Power OFF at
No-transmission mode (PLL
OFF, CPU OFF, X’tal ON)
20
30
A
Memory retention current
I
HD
SLEEP “L” (PLL OFF, CPU
OFF, X’tal OFF)
0.1
1.0
A
Crystal oscillation frequency
f
XT
(Note 4)
75
kHz
Crystal oscillation start-up time
t
st
Crystal oscillation
f
XT
75 kHz
1.0
s
Note 4: Guaranteed when V
DD
1.8~3.6 V, Ta 10~60°C
24 pin tuner power output, 25 pin RW (D
IN
), 26 pin DATA (D
OUT
), 27 pin CLOCK/SCAN
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Output current
“L” level
I
OL1
V
OL
0.3 V
1.4
2.8
mA
Input leak current
I
LI
V
IH
3.6 V, V
IL
0 V
1.0
A
“H” level
V
IH1
V
DD
0.8
~
3.6
Input voltage
“L” level
V
IL1
0
~
V
DD
0.2
V
7 pin IF count output, 8 pin TEST1 input, 9 pin AREA input
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Output current
“L” level
I
OL1
V
OL
0.3 V
1.4
2.8
mA
Input leak current
I
LI
V
IH
V
DD
, V
IL
0 V
1.0
A
“H” level
V
IH1
V
DD
0.8
~
V
DD
Input voltage
“L” level
V
IL1
0
~
V
DD
0.2
V
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