參數(shù)資料
型號(hào): TA2159F
廠商: Toshiba Corporation
英文描述: TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
中文描述: 東芝雙極線性集成電路硅單片
文件頁數(shù): 22/28頁
文件大?。?/td> 378K
代理商: TA2159F
TA2159F
2002-10-03
22
10 pin Basdis input, 11 pin Up key input, 12 pin input, 14 pin Beep output, 15 pin I/O
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
“H” level
I
OH1
V
DD
1.5 V,
V
OH
V
DD
0.2 V
1.5
3.0
Output current
“L” level
I
OL1
V
OL
0.3 V
1.4
2.8
mA
Input leak current
I
LI
V
IH
V
DD
, V
IL
0 V
1.0
A
“H” level
V
IH1
V
DD
0.8
~
V
DD
Input Voltage
“L” level
V
IL
0
~
V
DD
0.2
V
Input pull-up/pull down register
R
IN1
When I/O port P1 is set to
pull-up or pull-down.
(UP key, TEL key)
30
60
120
k
Mute Output
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
“H” level
I
OH1
V
OH
V
DD
0.3 V
1.5
3.0
Output current
“L” level
I
OL1
V
OL
0.3 V
1.4
2.8
mA
SLEEP,
RESET
Input
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input leak current
I
LI
V
IH
V
DD
, V
IL
0 V
1.0
A
“H” level
V
IH3
V
DD
0.8
~
V
DD
Input voltage
“L” level
V
IL3
0
~
V
DD
0.2
V
DO Output
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
“H” level
IOH1
V
OH
V
DD
0.3 V
1.0
2.0
Output voltage
“L” level
IOL1
V
OH
0.3 V
1.4
2.8
mA
Output off leak voltage
ITL
V
DD
1.5 V, V
TLH
1.5 V
V
TLL
0 V
100
nA
Others
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input pull-down resistance
R
IN2
(TEST 2)
5
10
30
k
R
fIN1
LF mode (OSCin)
300
600
1200
Input amp. feedback resistance
R
fIN2
(IFin)
300
600
1200
k
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