參數(shù)資料
型號: TDA1517A
廠商: NXP Semiconductors N.V.
英文描述: 8 W BTL or 2 x 4 W SE power amplifier
中文描述: 8糯橋接或2 × 4瓦東南功率放大器
文件頁數(shù): 5/20頁
文件大小: 132K
代理商: TDA1517A
2001 Apr 17
5
Philips Semiconductors
Product specification
8 W BTL or 2
×
4 W SE power amplifier
TDA1517ATW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
P
= 12 V; T
amb
= 25
°
C; measured in Fig.3; unless otherwise specified.
Note
1.
The circuit is DC adjusted at V
P
= 6 to 18 V and AC operating at V
P
= 8.5 to 18 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT.
V
P
V
PSC
V
rp
ERG
o
I
OSM
I
ORM
P
tot
T
vj
T
stg
T
amb
supply voltage
AC and DC short-circuit-safe voltage
reverse polarity voltage
energy handling capability at outputs
non-repetitive peak output current
repetitive peak output current
total power dissipation
virtual junction temperature
storage temperature
ambient temperature
55
40
18
18
6
200
4
2.5
5
150
+150
+85
V
V
V
mJ
A
A
W
°
C
°
C
°
C
V
P
= 0 V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
tbf
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
V
P
I
q
Operating condition
supply voltage
quiescent current
note 1
R
L
=
6.0
12
40
18
80
V
mA
V
MODE(oper)
I
MODE(oper)
V
O
V
OO
Mute condition
mode switch voltage level
mode switch current
DC output voltage
DC output offset voltage
8.5
15
5.7
V
P
40
150
V
μ
A
V
mV
V
MODE
= 12 V
V
MODE(mute)
V
O
V
OO
Standby condition
mode switch voltage level
DC output voltage
DC output offset voltage
3.3
5.7
6.4
150
V
V
mV
V
MODE(stb)
I
stb
mode switch voltage level
standby current
0
0.1
2
100
V
μ
A
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