參數(shù)資料
型號： TGF2021-08
英文描述： DC - 12 GHz Discrete power pHEMT
中文描述： 直流- 12吉赫的分立功率pHEMT制
文件頁數(shù)： 1/8頁
文件大?。?/td> 153K
代理商： TGF2021-08
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
DC - 12 GHz Discrete power pHEMT TGF2021-08
Key Features and Performance
Frequency Range: DC - 12 GHz
> 39 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
8mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 600-1000mA
(U
nder RF Drive, Id rises from 600mA to 1920mA)
Chip Dimensions: 0.57 x 2.42 x 0.10 mm
(0.022 x 0.095 x 0.004 in)
Primary Applications
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Product Description
The TriQuint TGF2021-08 is a discrete 8mm
pHEMT which operates from DC-12 GHz.
The TGF2021-08 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
The TGF2021-08 typically provides
> 39 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-08 appropriate for high efficiency
applications.
The TGF2021-08 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
The TGF2021-08 has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
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35
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Frequency (GHz)
M
MAG
MSG
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TGF2021-08-SG 功能描述:功率放大器 20-4000MHz Gain 12dB 12.5Volts Pwr 7 dBm RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝:
TGF2021-12 功能描述:射頻GaAs晶體管 DC-12GHz 12mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
TGF2022-06 功能描述:射頻GaAs晶體管 DC-20GHz 0.6mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
TGF2022-12 功能描述:射頻GaAs晶體管 DC-20GHz 1.2mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
TGF2022-24 功能描述:射頻GaAs晶體管 DC-20GHz 2.4mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
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