參數(shù)資料
型號： TGF2021-08
英文描述： DC - 12 GHz Discrete power pHEMT
中文描述： 直流- 12吉赫的分立功率pHEMT制
文件頁數(shù)： 6/8頁
文件大?。?/td> 153K
代理商： TGF2021-08
Advance Product Information
September 19, 2005
TGF2021-08
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
6
Unmatched S-parameter for 8mm pHEMT
Bias Conditions: Vd=12V, Idq=600mA
Note: The s-parameters are calculated by connecting nodes 1-8 together, and nodes
9-16 together to form a 2-port network.
Frequency
(GHz)
s11
dB
s11 ang
deg
-165.41
-172.72
-175.20
-176.46
-177.22
-177.75
-178.14
-178.44
-178.69
-178.90
-179.08
-179.25
-179.39
-179.53
-179.66
-179.78
-179.89
180.00
179.89
179.79
179.68
179.58
179.49
179.39
179.30
179.20
179.11
179.02
178.93
178.84
178.75
178.66
178.58
178.49
178.40
178.32
178.23
178.15
178.06
177.98
177.90
177.82
177.73
177.65
177.57
177.49
177.41
177.33
177.25
177.17
177.09
177.01
s21
dB
s21 ang
deg
s12
dB
s12 ang
deg
s22
dB
s22 ang
deg
-175.24
-176.34
-176.18
-175.74
-175.22
-174.70
-174.21
-173.77
-173.39
-173.06
-172.80
-172.60
-172.45
-172.36
-172.31
-172.31
-172.34
-172.40
-172.50
-172.62
-172.76
-172.92
-173.09
-173.28
-173.47
-173.68
-173.90
-174.12
-174.34
-174.57
-174.80
-175.03
-175.26
-175.49
-175.73
-175.96
-176.19
-176.42
-176.65
-176.88
-177.10
-177.33
-177.55
-177.77
-177.99
-178.20
-178.42
-178.63
-178.84
-179.05
-179.25
-179.46
0.5
-0.219
-0.218
-0.216
-0.215
-0.213
-0.210
-0.207
-0.204
-0.201
-0.197
-0.194
-0.190
-0.187
-0.183
-0.179
-0.175
-0.172
-0.168
-0.165
-0.162
-0.159
-0.155
-0.153
-0.150
-0.147
-0.144
-0.142
-0.139
-0.137
-0.135
-0.133
-0.131
-0.129
-0.128
-0.126
-0.124
-0.123
-0.122
-0.120
-0.119
-0.118
-0.117
-0.116
-0.115
-0.114
-0.113
-0.112
-0.111
-0.110
-0.110
-0.109
-0.109
19.074
13.085
9.538
6.995
4.997
3.340
1.917
0.662
-0.466
-1.494
-2.443
-3.326
-4.154
-4.935
-5.676
-6.382
-7.055
-7.701
-8.321
-8.917
-9.492
-10.047
-10.583
-11.103
-11.606
-12.094
-12.569
-13.029
-13.477
-13.913
-14.338
-14.752
-15.156
-15.551
-15.936
-16.314
-16.683
-17.044
-17.398
-17.746
-18.087
-18.422
-18.751
-19.076
-19.395
-19.709
-20.020
-20.326
-20.628
-20.927
-21.222
-21.515
93.88
86.79
82.14
78.13
74.41
70.85
67.41
64.08
60.84
57.69
54.62
51.64
48.74
45.92
43.18
40.52
37.94
35.44
33.01
30.65
28.36
26.14
23.98
21.88
19.85
17.87
15.94
14.07
12.25
10.48
8.75
7.06
5.42
3.81
2.25
0.72
-0.78
-2.24
-3.67
-5.08
-6.45
-7.80
-9.12
-10.41
-11.69
-12.94
-14.17
-15.38
-16.57
-17.74
-18.90
-20.04
-39.703
-39.685
-39.733
-39.810
-39.911
-40.033
-40.175
-40.335
-40.512
-40.703
-40.907
-41.121
-41.344
-41.574
-41.807
-42.041
-42.275
-42.504
-42.727
-42.943
-43.148
-43.342
-43.522
-43.683
-43.822
-43.933
-44.015
-44.066
-44.085
-44.074
-44.033
-43.965
-43.871
-43.755
-43.619
-43.465
-43.296
-43.114
-42.922
-42.721
-42.512
-42.299
-42.082
-41.862
-41.640
-41.418
-41.196
-40.975
-40.755
-40.539
-40.327
-40.121
6.63
2.29
0.41
-0.81
-1.72
-2.43
-2.98
-3.39
-3.65
-3.77
-3.73
-3.54
-3.19
-2.67
-1.99
-1.13
-0.11
1.08
2.43
3.95
5.62
7.45
9.43
11.58
13.87
16.28
18.79
21.36
23.96
26.55
29.12
31.64
34.10
36.47
38.75
40.93
43.00
44.96
46.81
48.56
50.19
51.72
53.15
54.48
55.71
56.86
57.91
58.88
59.77
60.58
61.31
61.98
-2.938
-2.874
-2.829
-2.776
-2.713
-2.641
-2.561
-2.475
-2.384
-2.290
-2.196
-2.101
-2.007
-1.914
-1.824
-1.737
-1.653
-1.573
-1.497
-1.424
-1.354
-1.289
-1.226
-1.168
-1.112
-1.060
-1.010
-0.964
-0.920
-0.878
-0.839
-0.803
-0.768
-0.735
-0.704
-0.674
-0.647
-0.620
-0.595
-0.572
-0.549
-0.528
-0.508
-0.489
-0.470
-0.453
-0.436
-0.421
-0.406
-0.391
-0.377
-0.364
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
11
11.5
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
23.5
24
24.5
25
25.5
26
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TGF2021-08-SG 功能描述:功率放大器 20-4000MHz Gain 12dB 12.5Volts Pwr 7 dBm RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝:
TGF2021-12 功能描述:射頻GaAs晶體管 DC-12GHz 12mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2022-06 功能描述:射頻GaAs晶體管 DC-20GHz 0.6mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2022-12 功能描述:射頻GaAs晶體管 DC-20GHz 1.2mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2022-24 功能描述:射頻GaAs晶體管 DC-20GHz 2.4mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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