參數(shù)資料
型號(hào): TGF4230
廠商: TriQuint Semiconductor,Inc.
英文描述: 1.2mm Discrete HFET
中文描述: 1.2mm的離散異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 7/7頁(yè)
文件大小: 178K
代理商: TGF4230
MECHANICAL DRAWING
NOTES
7
TGF4230-EEU
0.699
0.601
0.350
0.099
0.0
0.0
0.097
0.264
0.572
1
2
3
4
0.471
R/C**
Minimum connections to Bond Pads 1 and 4. Sources are connected to backside metalization.
* Alternate gate pads used for paralleling TGF4230s or for multiple gate wires.
** Wafer unique Row/Column data is recorded in brackets.
Units: Millimeters
Thickness: 0.102
Chip size ± 0.0508
Bond pad 1 (gate): 0.072 x 0.075
Bond pad 2 (gate): 0.075 x 0.075*
Bond pad 3 (gate): 0.075 x 0.075*
Bond pad 4 (drain): 0.083 x 0.077
Gate bias supplies should be designed to sink or source gate current. The magnitude and direction of the gate
current is a function of bias point, load impedance, and drive level.
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TGF4230-EEU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:1.2mm Discrete HFET
TGF4230-SCC 功能描述:射頻GaAs晶體管 DC-12.0GHz 0.7W HFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF4240 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:2.4mm Discrete HFET
TGF4240-EPU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:2.4mm Discrete HFET
TGF4240-SCC 功能描述:射頻GaAs晶體管 DC-12.0GHz 1.4 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: