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參數(shù)資料
| 型號： | TGF4250-EEU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 4.8 mm Discrete HFET |
| 中文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET |
| 封裝： | DIE-12 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 179K |
| 代理商： | TGF4250-EEU |
TGF4250-EEU
5
RF AND DC
CHARACTERISTICS
LINEAR MODEL
PARAMETER
MIN
33
7
47
816
576
-2.7
-30
-30
NOMINAL
34
8.5
53
1176
792
-1.85
-22
-22
MAX
UNIT
dBm
dB
%
mA
mS
V
V
V
Pout
G
P
PAE
I
DSS
G
M
V
P
BV
GS
BV
GD
Output Power
Power Gain
Power Added Efficiency
Drain Saturation Current
Transconductance
Pinch Off Voltage
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
-
-
-
1536
1008
-1
-17
-17
Pout, Gain, and PAE:
Measured at 8.5-GHz, drain voltage of 8.0 V . Gate voltage is adjusted to achieve
quiescent current of approximately 20% I
DSS
with no RF signal applied. The source is grounded. Input power
between 25 and 26-dBm.
I
DSS
: Saturated drain-source current.
Search for the maximum I
DS
at V
GS
= 0.0 V, and V
DS
swept between 0.5 V
to 3.5 V. Note that the drain voltage at which I
DSS
is located and recorded as V
DSP
.
G
M
: Transconductance.
(I
DSS
- I
DS1
)/
I
V
G
1
I
. I
DS1
measured at V
G1
=
-
0.25 V using the knee search technique;
V
DS
swept between 0.5 V and V
DSP
to search for maximum I
DS1
.
V
P
: Pinch off voltage.
V
GS
for I
DS
= 0.5 mA/mm of gate width. V
DS
fixed at 2.0 V, V
GS
swept to bring I
DS
to
0.5 mA/mm. Sweep will stop if V
P
current not found beyond 0.5 V of the minimum V
P
specification.
BV
GS
: Breakdown voltage, gate to source.
I
BD
= 1.0 mA/mm of gate width. Source fixed at ground, drain not
connected (floating). When 1.0mA/mm drawn at gate, V
GS
measured as BV
GS
.
BV
GD
: Breakdown voltage, gate to drain.
I
BD
= 1.0 mA/mm of gate width. Drain fixed at ground, source not
connected (floating). When 1.0 mA/mm drawn at the gate, V
GD
measured as BV
GD
.
G
R
G
R
GS
C
GS
R
DG
C
DG
V
CCS
L
D
R
D
D
C
DS
R
DS
R
2
R
1
R
S
L
S
R
I
L
G
FET Elements
L
G
= 0.010525 nH
R
G
= 0.21075
R
GS
= 20425
I
= 0.3025
C
GS
= 4.84 pF
C
DG
= 0.4015 pF
R
DG
= 51000
R
S
= 0.1
L
S
= 0.011 nH
R
DS
= 24.5025
C
DS
= 1.013 pF
R
D
= 0.165
L
D
= 0.0055 nH
VCCS Parameters
M = 531.6 mS
A = 0
R1 = 1E19
R2 = 1E19
F = 0
T = 5.49 pS
V
DS
= 8.0 V and 30% I
DSS
at T = 25°C
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| TGF4250-SCC | 功能描述:射頻GaAs晶體管 DC-10.5GHz 2.5 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| TGF4260 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:9.6mm Discrete HFET |
| TGF4260-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:9.6mm Discrete HFET |
| TGF4260-SCC | 功能描述:射頻GaAs晶體管 DC-10.5GHz 5 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| TGF4350 | 功能描述:射頻放大器 DC-22GHz 0.3mm pHEMT (0.25um) RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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