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參數(shù)資料
| 型號： | TIM1213-4L |
| 廠商： | Toshiba Corporation |
| 英文描述： | Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) |
| 中文描述： | 低失真內(nèi)部匹配砷化鎵場效應管（十，Ku波段） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 130K |
| 代理商： | TIM1213-4L |
TOSHIBA
TOSHIBA CORPORATION
MW50230196
1/4
MICROWAVE POWER GaAs FET
TIM1213-4L
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
Features
Low intermodulation distortion
- IM
3
= -45 dBc at Po = 25 dBm,
- Single carrier level
High power
- P
1dB
= 36.5 dBm at 12.7 GHz to 13.2 GHz
High gain
- G
1dB
= 7.5 dB at 12.7 GHz to 13.2 GHz
Broad band internally matched
Hermetically sealed package
RF Performance Specifications (Ta = 25
°
C)
Note 1: 2 Tone Test (Pout = 25 dBm Single Carrier Level).
Electrical Characteristics (Ta = 25
°
C)
Characteristics
Symbol
Condition
Unit
Min.
Typ.
Max
Output Power at 1dB
Compression Point
P
1dB
V
DS
= 9V
f = 12.7 ~ 13.2 GHz
dBm
35.5
36.5
–
Power Gain at 1dB
Compression Point
G
1dB
dB
6.5
7.5
–
Drain Current
I
DS1
G
A
–
1.7
2.2
Gain Flatness
dB
–
–
±
0.8
Power Added Efficiency
η
add
%
–
24
–
3rd Order Intermodulation Distortion
IM
3
Note 1
dBc
-42
-45
–
Drain Current
I
DS2
T
A
–
1.7
2.2
Channel-Temperature Rise
ch
V
DS
xI
DS
xR
th(c-c)
°
C
–
–
70
Characteristic
Symbol
Condition
Unit
Min.
Typ.
Max
Trans-conductance
gm
V
I
DS
DS
= 2.0A
= 3V
mS
–
1200
–
Pinch-off Voltage
V
GSoff
V
DS
= 60mA
= 3V
I
DS
V
-2
-3.5
-5
Saturated Drain Current
I
DSS
V
V
DS
GS
= 3V
= 0V
A
–
4.0
5.2
Gate-Source Breakdown Voltage
V
GSO
I
GS
= -60
μ
A
V
-5
–
–
Thermal Resistance
R
th (c-c)
Channel
to case
°
C/W
–
2.9
3.5
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