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| 型號： | TISP61089HDM |
| 廠商： | Bourns Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTOR PROGRAMMABLE OVERVOLTAGE PROTECTOR |
| 中文描述： | 雙遠期導(dǎo)電的P -門晶閘管可編程過壓保護 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 151K |
| 代理商： | TISP61089HDM |
MAY 2004 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
APPLICATIONS INFORMATION (Continued)
TISP61089HDM Overvoltage Protector
Figure 4.
Figure 5.
PEAK AC
vs
CURRENT DURATION
t - Current Duration - s
0.1
1
10
100
1000
P
0.15
0.2
0.3
0.4
0.5
0.6
1.5
2
3
4
5
6
7
15
1
10
AI-TISP6-002-a
TISP61089HDM I
TSM
GR-1089 First Level Tests
TYPICAL TIME TO OPEN
vs
CURRENT
t - Current Duration - s
0.01
0.1
1
10
100
1000
R
2
3
4
5
6
7
8
20
30
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10
AI-TISP6-003-a
B1250T
TISP61089HDM
GR-1089-CORE Issue A.C. Power Fault testing has been comprehended in the design of the TISP61089HDM. For compliance, circuit designs
must pass both First Level and Second Level A.C. Power Fault testing.
First Level Power Fault testing requires that the equipment shall not be damaged and continues to operate correctly without disruption to
other parts of the system. In laboratory tests it has been shown that the circuit shown in Figure 3 can pass these tests without damage.
Figure 4 shows the TISP61089HDM I
TSM
rating to be above the level of GR-1089-CORE First Level tests.
Second Level Power Fault testing may result in the equipment becoming non-operational, but any component failure should not allow the
equipment to become a hazard. The system should not burn, fragment, or become an electrical safety hazard. The test data in Figure 5
illustrates that the TISP61089HDM and the B1250T are current coordinated, as the fuse interrupt time is shorter than the time it takes to
damage the TISP61089HDM package for a given current.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61089HDM_07 | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:Overvoltage Protector |
| TISP61089HDMR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089LDR-S | 制造商:Bourns Inc 功能描述:THYRISTOR, SURGE PROTECTOR, -120V, SOIC-8; No. of Circuits:2; Thyristor Type:SLIC Protector; Thyristor Case:SOIC; No. of Pins:8; Breakover Voltage Vbo Max:-64V; Peak Off-State Voltage, Vdrm:-120V |
| TISP61089M | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:TISP61089M SLIC Overvoltage Protector |
| TISP61089MDR-S | 功能描述:PROTECTOR PROGRAMMABLE SLIC RoHS:是 類別:過電壓，電流，溫度裝置 >> TVS - 晶閘管 系列:- 產(chǎn)品變化通告:Product Discontinuation 19/Jul/2012 標準包裝:2,500 系列:- 電壓 - 擊穿:400V 電壓 - 斷路:320V 電壓 - 導(dǎo)通狀態(tài):4V 電流 - 峰值脈沖(8 x 20µs):250A 電流 - 峰值脈沖(10 x 1000µs):80A 電流 - 保持 (Ih):150mA 元件數(shù):1 電容:29pF 封裝/外殼:DO-214AA，SMB 包裝:帶卷 (TR) |
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