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| 型號(hào)： | TISP61089HDM |
| 廠商： | Bourns Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTOR PROGRAMMABLE OVERVOLTAGE PROTECTOR |
| 中文描述： | 雙遠(yuǎn)期導(dǎo)電的P -門晶閘管可編程過(guò)壓保護(hù) |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 151K |
| 代理商： | TISP61089HDM |
MAY 2004 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
TISP61089HDM Overvoltage Protector
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Description (Continued)
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC
negative supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state
condition. As the overvoltage subsides the high holding current of TISP61089HDM SCR prevents d.c. latchup.
The TISP61089HDM is designed to be used with a pair of Bourns
B1250T fuses for overcurrent protection. Level 2 power fault compliance
requires the series overcurrent element to become open-circuit or high impedance. For equipment compliant to ITU-T recommendations K.20,
K.21 or K.45 only, the series resistor value is set by the coordination requirements. For coordination with a 400 V limit GDT, a minimum series
resistor value of 6.5
is recommended.
Rating
Symbol
V
DRM
V
GKRM
Value
-170
-167
Unit
V
V
Repetitive peak off-state voltage, V
GK
= 0
Repetitive peak gate-cathode voltage, V
KA
= 0
Non-repetitive peak impulse current (see Notes 1, 2 and 3)
10/1000
μ
s (Telcordia GR-1089-CORE, Issue 3)
5/310
μ
s (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700
μ
s)
10/360
μ
s (Telcordia GR-1089-CORE, Issue 3)
1.2/50
μ
s voltage waveshape (Telcordia GR-1089-CORE, Issue 3), including 3
non-inductive resistor
2/10
μ
s (Telcordia GR-1089-CORE, Issue 3)
Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 4)
0.5 s
1 s
2 s
5 s
30 s
900 s
Junction temperature
Storage temperature range
I
PPSM
100
150
100
500
500
A
I
TSM
7.7
6.1
4.8
3.7
2.8
2.6
A
T
J
T
stg
-40 to +150
-65 to +150
°
C
°
C
NOTES: 1. Initially the device must be in thermal equilibrium with T
J
= 25
°
C. The surge may be repeated after the device returns to its initial
conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Ratings are obtained by using the gate circuitry as shown in Fig. 3.
3. Rated currents only apply if pins 1 & 8 (Tip) are connected together, pins 4 & 5 (Ring) are connected together and pins 6 & 7
(Anode) are connected together.
4. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm
printed wiring track widths.
Test Conditions
Min Typ Max Unit
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
A
= 25
°
C
T
A
= 85
°
C
-5
-50
12
12
20
3
6
7
10
μ
A
V
GK(BO)
Gate-cathode impulse breakover voltage
10/1000
μ
s, I
TM
= 100 A, V
GG
= -100 V
5/310
μ
s, I
TM
= 150 A, V
GG
= -100 V
2/10
μ
s, I
TM
= 200 A, V
GG
= -100 V (see Note 5)
I
F
= 5 A, t
W
= 200
μ
s
10/1000
μ
s, I
F
= 100 A, V
GG
= -100 V
5/310
μ
s, I
F
= 150 A, V
GG
= -100 V
2/10
μ
s, I
F
= 200 A, V
GG
= -100 V (see Note 5)
V
V
F
Forward voltage
V
V
FRM
Peak forward recovery voltage
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61089HDM_07 | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:Overvoltage Protector |
| TISP61089HDMR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089LDR-S | 制造商:Bourns Inc 功能描述:THYRISTOR, SURGE PROTECTOR, -120V, SOIC-8; No. of Circuits:2; Thyristor Type:SLIC Protector; Thyristor Case:SOIC; No. of Pins:8; Breakover Voltage Vbo Max:-64V; Peak Off-State Voltage, Vdrm:-120V |
| TISP61089M | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:TISP61089M SLIC Overvoltage Protector |
| TISP61089MDR-S | 功能描述:PROTECTOR PROGRAMMABLE SLIC RoHS:是 類別:過(guò)電壓，電流，溫度裝置 >> TVS - 晶閘管 系列:- 產(chǎn)品變化通告:Product Discontinuation 19/Jul/2012 標(biāo)準(zhǔn)包裝:2,500 系列:- 電壓 - 擊穿:400V 電壓 - 斷路:320V 電壓 - 導(dǎo)通狀態(tài):4V 電流 - 峰值脈沖(8 x 20µs):250A 電流 - 峰值脈沖(10 x 1000µs):80A 電流 - 保持 (Ih):150mA 元件數(shù):1 電容:29pF 封裝/外殼:DO-214AA，SMB 包裝:帶卷 (TR) |
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