參數(shù)資料
型號(hào)： TISP61089HDM
廠商： Bourns Inc.
英文描述： DUAL FORWARD-CONDUCTING P-GATE THYRISTOR PROGRAMMABLE OVERVOLTAGE PROTECTOR
中文描述： 雙遠(yuǎn)期導(dǎo)電的P -門晶閘管可編程過(guò)壓保護(hù)
文件頁(yè)數(shù)： 3/7頁(yè)
文件大小： 151K
代理商： TISP61089HDM
MAY 2004 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Thermal Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Parameter Measurement Information
TISP61089HDM Overvoltage Protector
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted) (Continued)
Parameter
I
H
Holding current
I
T
= -1 A, di/dt = 1 A/ms, V
GG
= -100 V
-150
mA
I
GKS
Gate reverse current
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
T
A
= 25
°
C
T
A
= 85
°
C
-5
-50
15
2.5
40
μ
A
I
GT
V
GT
C
KA
NOTE:
Gate trigger current
Gate-cathode trigger voltage
Cathode-anode off-state capacitance
I
T
= -3 A, t
p(g)
≥
20
μ
s, V
GG
= -100 V
I
T
= -3 A, t
p(g)
≥
20
μ
s, V
GG
= -100 V
f = 1 MHz, V
d
= 1 V rms, V
D
= -50 V, I
G
= 0
mA
V
pF
5. Voltage measurements should be made with an oscilloscope with limited bandwidth (20 MHz) to avoid high frequency noise.
Test Conditions
Min Typ Max Unit
Test Conditions
Min Typ Max
Unit
R
θ
JA
Junction to ambient thermal resistance
EIA/JESD51-7 PCB, EIA/JESD51-2 Environment, P
TOT
= 4 W
(See Note 6)
55
°
C/W
NOTE
6. EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths.
Figure 1. Voltage-Current Characteristic
Unless Otherwise Noted, All Voltages are Referenced to the Anode
-v
I
S
V
S
V
GG
V
D
I
H
I
T
V
T
I
TSM
I
PPSM
V
(BO)
I
(BO)
I
D
Quadrant I
Forward
Conduction
Characteristic
+v
+i
I
F
V
F
I
FSM
(= |I
TSM
|)
I
PPSM
-i
Quadrant III
Switching
Characteristic
V
GK(BO)
PM-TISP6-001-a
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP61089HDM_07 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:Overvoltage Protector
TISP61089HDMR-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089LDR-S 制造商:Bourns Inc 功能描述:THYRISTOR, SURGE PROTECTOR, -120V, SOIC-8; No. of Circuits:2; Thyristor Type:SLIC Protector; Thyristor Case:SOIC; No. of Pins:8; Breakover Voltage Vbo Max:-64V; Peak Off-State Voltage, Vdrm:-120V
TISP61089M 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:TISP61089M SLIC Overvoltage Protector
TISP61089MDR-S 功能描述:PROTECTOR PROGRAMMABLE SLIC RoHS:是 類別:過(guò)電壓，電流，溫度裝置 >> TVS - 晶閘管 系列:- 產(chǎn)品變化通告:Product Discontinuation 19/Jul/2012 標(biāo)準(zhǔn)包裝:2,500 系列:- 電壓 - 擊穿:400V 電壓 - 斷路:320V 電壓 - 導(dǎo)通狀態(tài):4V 電流 - 峰值脈沖(8 x 20µs):250A 電流 - 峰值脈沖(10 x 1000µs):80A 電流 - 保持 (Ih):150mA 元件數(shù):1 電容:29pF 封裝/外殼:DO-214AA，SMB 包裝:帶卷 (TR)
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