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參數(shù)資料
| 型號： | TPC6104 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) |
| 中文描述： | 東芝場效應(yīng)晶體管硅P通道馬鞍山型（U型MOSIII） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 205K |
| 代理商： | TPC6104 |
TPC6104
2004-07-06
3
Marking
(Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t
=
5 s)
(b) Device mounted on a glass-epoxy board (b) (t
=
5 s)
Note 3: V
DD
=
16 V, T
ch
=
25°C (initial), L
=
0.5 mH, R
G
=
25
, I
AR
=
2.75 A
Note 4: Repetitive rating;:pulse width limited by maximum channel temperature
Note 5:
on lower left of the marking indicates Pin 1.
(a)
FR-4
25.4
×
25.4
×
0.8
Unit: (mm)
(b)
FR-4
25.4
×
25.4
×
0.8
Unit: (mm)
Part No.
(or abbreviation code)
S3D
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot code (month)
Lot No.
Pin #1
Lot code
(year)
Product-specific code
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPC6104(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 5.5A, 20V, TSOP6 |
| TPC6104(TE85L,F,M) | 功能描述:MOSFET MOSFET P-Ch 20V 4.5A Rdson=0.04Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPC6104(TE85LF) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 5.5A 20V TSOP6 |
| TPC6104_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Notebook PC Applications Portable Equipment Applications |
| TPC6105 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) |
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