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參數(shù)資料
| 型號(hào)： | TPS1100YPW |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| 中文描述： | 單P溝道增強(qiáng)型MOSFET |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 155K |
| 代理商： | TPS1100YPW |
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Copyright
1998, Texas Instruments Incorporated
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TPS1100Y | CONNECTOR ACCESSORY |
| TPS1100YD | CONNECTOR ACCESSORY |
| TPS1101YPW | TELEPHONE CBL 8-CONDUCTOR1000 |
| TPS1101DW | CONNECTOR ACCESSORY |
| TPS1101PW | CONNECTOR ACCESSORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPS1101 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101_12 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101D | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPS1101DG4 | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPS1101DR | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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