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參數(shù)資料
| 型號： | TSM1N60LCH |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | N-Channel Power Enhancement Mode MOSFET |
| 中文描述： | N溝道功率增強型MOS管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 181K |
| 代理商： | TSM1N60LCH |
TSM1N60L
2-4
2006/01 rev. A
Electrical Characteristics
Tj = 25
o
C, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
600
--
--
V
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 0.6A
R
DS(ON)
--
10
12
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
2.0
--
4.0
V
Zero Gate Voltage Drain Current
V
DS
= 600V, V
GS
= 0V
I
DSS
--
--
10
uA
Gate Body Leakage
V
GS
= ± 30V, V
DS
= 0V
I
GSS
--
--
± 100
nA
Forward Transconductance
V
DS
≧
50V, I
D
= 0.5A
g
fs
--
10
--
S
Dynamic
Total Gate Charge
Q
g
--
4.5
6.0
Gate-Source Charge
Q
gs
--
1.1
--
Gate-Drain Charge
V
DS
= 480V, I
D
= 1.0A,
V
GS
= 10V
Q
gd
--
2.0
--
nC
Turn-On Delay Time
t
d(on)
--
10
30
Turn-On Rise Time
t
r
--
20
50
Turn-Off Delay Time
t
d(off)
--
25
45
Turn-Off Fall Time
V
DD
= 300V,
I
D
= 1A, V
GEN
= 10V,
R
G
= 25
t
f
--
24
60
nS
Input Capacitance
C
iss
--
155
200
Output Capacitance
C
oss
--
20
26
Reverse Transfer Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
3
4
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
1.0
A
Diode Forward Voltage
Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%
2. Negligible, Dominated by circuit inductance.
I
S
= 1.0A, V
GS
= 0V
V
SD
--
--
1.4
V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TSM1N60LCH C5 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) TO-251 Tube |
| TSM1N60LCP | 功能描述:MOSFET 600V 1A N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM1N60LCP R0 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) TO-252 T/R |
| TSM1N60SCT | 功能描述:MOSFET 600V 1A N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM1N60SCT A3 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo |
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