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參數(shù)資料
| 型號(hào)： | TSM25N03CPRO |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 25V N-Channel MOSFET |
| 中文描述： | 25V的N溝道MOSFET |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 309K |
| 代理商： | TSM25N03CPRO |
TSM25N03
25V N-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
2/6
Version: A07
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250uA
V
GS
= ±20V, V
DS
= 0V
V
DS
= 25V, V
GS
= 0V
V
DS
≥
5V, V
GS
= 10V
V
GS
= 4.5V, I
D
= 25A
V
GS
= 10V, I
D
= 25A
V
DS
= 15V, I
D
= 15A
I
S
= 20A, V
GS
= 0V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
25
1.0
--
--
25
--
--
--
--
--
1.9
--
--
--
14.5
9.5
12
0.87
--
3.0
±100
1.0
--
19
14
--
1.5
V
V
nA
uA
A
Drain-Source On-State Resistance
R
DS(ON)
m
Ω
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Total Gate Charge
g
fs
V
SD
S
V
Q
g
Q
gs
--
14.7
26
Gate-Source Charge
--
2.5
--
Gate-Drain Charge
V
DS
= 15V, I
D
= 25A,
V
GS
= 10V
Q
gd
--
3
--
nC
Input Capacitance
C
iss
--
921
--
Output Capacitance
C
oss
--
208.7
--
Reverse Transfer Capacitance
Switching
c
Turn-On Delay Time
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
108.2
--
pF
t
d(on)
--
20.2
--
Turn-On Rise Time
t
r
--
5.9
--
Turn-Off Delay Time
t
d(off)
t
f
--
49.5
--
Turn-Off Fall Time
Notes:
a. pulse test: PW
≤
300
μ
S, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
V
DD
= 15V, R
L
= 15
Ω
,
I
D
= 1A, V
GEN
= 10V,
R
G
= 16
Ω
--
16.7
--
nS
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