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參數(shù)資料
| 型號： | UPA1857GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 73K |
| 代理商： | UPA1857GR-9JG |
Data Sheet G15060EJ2V0DS
2
μ
PA1857
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±20
V, V
DS
= 0
V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 2.0
A
2.5
5.4
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 2.0
A
53
67.0
m
R
DS(on)2
V
GS
= 4.5
V, I
D
= 2.0
A
64
86.0
m
R
DS(on)3
V
GS
= 4.0
V, I
D
= 2.0
A
71
95.0
m
Input Capacitance
C
iss
V
DS
= 10
V
580
pF
Output Capacitance
C
oss
V
GS
= 0
V
100
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
50
pF
Turn-on Delay Time
t
d(on)
V
DD
= 30
V, I
D
= 2.0
A
10
ns
Rise Time
t
r
V
GS
= 10
V
9
ns
Turn-off Delay Time
t
d(off)
R
G
= 6
32
ns
Fall Time
t
f
4
ns
Total Gate Charge
Q
G
V
DD
= 48
V
12
nC
Gate to Source Charge
Q
GS
V
GS
= 10
V
2
nC
Gate to Drain Charge
Q
GD
I
D
= 3.8
A
3
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 3.8
A, V
GS
= 0
V
0.80
V
Reverse Recovery Time
t
rr
I
F
= 3.8
A, V
GS
= 0
V
33
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
μ
s
58
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
≤
1%
τ
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS(on)
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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| UPA1858 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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| UPA1870BGR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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