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參數(shù)資料
| 型號： | UPA1857GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 73K |
| 代理商： | UPA1857GR-9JG |
Data Sheet G15060EJ2V0DS
3
μ
PA1857
TYPICAL CHARACTERISTICS (T
A
= 25°C)
#
25
50
75
100
125
150
20
40
60
80
100
120
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
T
A
- Ambient Temperature -
C
0
T
C
- Case Temperature -
C
P
T
-
0
0
25
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
75
100
125
150
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Single Pulse
Mounted on Ceramic
Board of 50 cm x1.1 mm
2unit:
P
D
(FET1) : P
D
(FET2) = 1 : 1
2unit
1unit
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0
0.8
1.0
0.4
0.6
0
4
8
12
16
4.5 V
V
GS
= 10 V
4.0 V
10
1
0.1
0.01
0.001
0.0001
0.00001
0
1
2
3
4
100
25
C
75
C
V
GS
- Gate to Source Voltage - V
25
C
V
DS
= 10 V
FORWARD TRANSFER CHARACTERISTICS
I
D
T
A
= 125
C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
= 10 V
I
D
= 1 mA
50
50
100
0
150
1
1.5
2
2.5
3
FORWARD BIAS SAFE OPERATING AREA
10.0
100.0
I
D
1.0
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
Single Pulse Mounted on Ceramic
Board of 50 cm x1.1 mm
P
D
(FET1) : P
D
(FET2) = 1 : 1
10ms
100ms
DC
(2unt
DC
(1unt
1
ms
R
=
(@V
GS
10V
I
D(pulse)
I
D(DC)
PW
=
100
μ
s
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