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參數(shù)資料
| 型號： | UPA2719GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)的P -溝道功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 140K |
| 代理商： | UPA2719GR |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2719GR
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. G16953EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The
μ
PA2719GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
Low on-state resistance
R
DS(on)1
= 13 m
MAX. (V
GS
=
10 V, I
D
=
5.0 A)
R
DS(on)2
= 20.9 m
MAX. (V
GS
=
4.5 V, I
D
=
5.0 A)
Low C
iss
: C
iss
= 2010 pF TYP.
Built-in gate protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2719GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
Drain Current (DC)
I
D(DC)
Drain Current (pulse)
Note1
I
D(pulse)
Total Power Dissipation
Note2
Total Power Dissipation
Note3
Channel Temperature
Storage Temperature
Single Avalanche Current
Note4
Single Avalanche Energy
Note4
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3.
Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
4.
Starting T
ch
= 25°C, V
DD
= –15 V, R
G
= 25
, L = 100
μ
H, V
GS
= –20
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
–30
m
20
m
10
m
100
2
2
150
V
V
A
A
W
W
°C
°C
A
mJ
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
–55 to + 150
10
10
PACKAGE DRAWING (Unit: mm)
8
5
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
1, 2, 3
4
5, 6, 7, 8 : Drain
: Source
EQUIVALENT CIRCUIT
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
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|---|---|
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