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參數(shù)資料
| 型號： | UPA2719GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)的P -溝道功率MOSFET |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 140K |
| 代理商： | UPA2719GR |
Data Sheet G16953EJ1V0DS
4
μ
PA2719GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
-25
-50
-75
-100
-125
0
-0.5
-1
-1.5
-2
Pulsed
V
GS
=
10 V
4 V
4.5 V
V
DS
- Drain to Source Voltage - V
I
D
-0.01
-0.1
-1
-10
-100
0
-1
-2
-3
-4
-5
V
DS
=
10 V
Pulsed
T
A
= 150°C
75°C
25°C
40°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0
-0.5
-1
-1.5
-2
-2.5
-50
0
50
100
150
V
DS
=
10 V
I
D
=
1 mA
T
ch
- Channel Temperature -
°
C
|
f
0.01
0.1
1
10
100
-0.01
-0.1
-1
-10
-100
V
DS
=
10 V
Pulsed
T
A
= 150°C
75°C
25°C
40°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
10
20
30
40
-1
-10
-100
-1000
Pulsed
V
GS
=
10 V
4.5 V
4 V
I
D
- Drain Current - A
R
D
0
10
20
30
40
0
-5
-10
-15
-20
I
D
=
5 A
Pulsed
V
GS
- Gate to Source Voltage - V
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