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參數(shù)資料
| 型號： | uPA2727UT1A-E2-AZ |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 177K |
| 代理商： | UPA2727UT1A-E2-AZ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2727UT1A
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. G18300EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2006,
2007
PACKAGE DRAWING (Unit: mm)
1
2
3
4
7
8
6
5
1
5
±
0
5
±
0
6
±
0.2
3.65
±
0.2
0.7
±
0.15
0.6
±
0.15
0
0
+
0
0.10 S
0
0
+
0
±
0
1
4
±
0
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
5.4
±
0.2
1
0.2
DESCRIPTION
The
μ
PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications.
FEATURES
Low on-state resistance
R
DS(on)1
= 9.6 m
Ω
MAX. (V
GS
= 10 V, I
D
= 8 A)
R
DS(on)2
= 15 m
Ω
MAX. (V
GS
= 4.5 V, I
D
= 8 A)
Low Q
GD
Q
GD
= 3.5 nC TYP. (V
DD
= 15 V, I
D
= 16 A)
Thin type surface mount package with heat spreader (8-pin HVSON)
RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
Total Power Dissipation (PW = 10 sec)
Note2
Channel Temperature
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
THERMAL RESISTANCE
Channel to Ambient Thermal Resistance
Note2
R
th(ch-A)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
30
±
20
±
16
±
96
1.5
4.6
150
V
V
A
A
W
W
°
C
°
C
A
mJ
55 to
+
150
16
26
83.3
°
C/W
°
C/W
Channel to Case (Drain) Thermal Resistance R
th(ch-C)
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
3.
Starting T
ch
= 25
°
C, V
DD
= 15 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V, L = 100
μ
H
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and
quickly dissipate it once, when it has occurred.
2.0
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
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