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參數(shù)資料
| 型號(hào)： | UPA2719GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)的P -溝道功率MOSFET |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 140K |
| 代理商： | UPA2719GR |
Data Sheet G16953EJ1V0DS
5
μ
PA2719GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
D
0
10
20
30
-50
0
50
100
150
I
D
=
5 A
Pulsed
V
GS
=
10 V
4.5 V
4 V
T
ch
- Channel Temperature - °C
C
i
,
o
,
r
10
100
1000
10000
-0.1
-1
-10
-100
V
GS
= 0 V
f = 1 MHz
C
iss
C
rss
C
oss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d
,
r
,
d
,
f
1
10
100
1000
10000
-0.1
-1
-10
-100
V
DD
=
15 V
V
GS
=
10 V
R
G
= 10
t
d(off)
t
f
t
r
t
d(on)
I
D
- Drain Current - A
V
D
0
-10
-20
-30
0
20
40
60
0
-5
-10
-15
I
D
=
10 A
V
DD
=
24 V
15 V
6 V
V
DS
V
GS
Q
G
- Gate Charge - nC
V
G
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Pulsed
V
GS
=
10 V
0 V
V
F(S-D)
- Source to Drain Voltage - V
t
r
10
100
1000
0.1
1
10
100
V
GS
= 0 V
di/dt = 50 A/
μ
s
I
F
- Diode Forward Current - A
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