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參數(shù)資料
| 型號(hào)： | uPA2727UT1A-E1-AZ |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 177K |
| 代理商： | UPA2727UT1A-E1-AZ |
Data Sheet G18300EJ1V0DS
3
μ
PA2727UT1A
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
00
40
20
60
100
140
80
120
160
120
100
80
60
40
20
T
A
- Ambient Temperature -
°
C
D
0.1
1
10
100
1000
0.01
0.1
1
10
100
I
D(pulse)
I
D(DC)
Single Pulse
Mounted on a glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mm
PW=300
μ
s
i
s
1
0m
1
00m
i
s
1
m
i
s
1
0s
R
DSon
Lm0V)
(V
GS
=1
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
0.01
0.1
1
10
100
1000
R
th(ch-A)
= 83.3
°
C/W
i
R
th(ch-C)
= 2.0
°
C/W
i
Single Pulse
R
th(ch-A)
: Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
PW - Pulse Width - s
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
D
0
5
10
15
20
25
30
35
0
0.2
0.4
0.6
0.8
1
V
GS
= 3.0 V
3.2 V
3.4 V
3.6 V
Pulsed
3.8 V
10 V
4.5 V
4.0 V
V
DS
- Drain to Source Voltage - V
D
0
5
10
15
20
25
30
35
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
A
=
55
°
C
25
°
C
75
°
C
125
°
C
V
GS
- Gate to Source Voltage - V
100
μ
1 m 10 m 100 m 1 10 100 1000
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| UPA2727UT1A-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2727UT1A-E2-AZ | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2730 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA2730TP Data Sheet | Data Sheet[11/2002] |
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| UPA2730TP-E2-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics 功能描述:Pch -30V -42A 7m@10V 8HSOP Cut Tape |
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