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參數(shù)資料
| 型號(hào)： | uPA2727UT1A-E2-AY |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 177K |
| 代理商： | UPA2727UT1A-E2-AY |
Data Sheet G18300EJ1V0DS
4
μ
PA2727UT1A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
G
0
0.5
1
1.5
2
2.5
3
-75
-25
25
75
125
175
V
DS
= 10 V
I
D
=1 mA
T
ch
- Channel Temperature -
°
C
f
0.1
1
10
100
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
A
=
55
°
C
25
°
C
75
°
C
125
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
D
Ω
0
10
20
30
0.1
1
10
100
Pulsed
10 V
V
GS
= 4.5 V
I
D
- Drain Current - A
D
Ω
0
10
20
30
0
5
10
15
20
I
D
= 8 A
Pulsed
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
D
Ω
0
5
10
15
20
25
-75
-25
25
75
125
175
I
D
= 8 A
Pulsed
V
GS
= 4.5 V
10 V
T
ch
- Channel Temperature -
°
C
i
,
o
,
r
10
100
1000
10000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
rss
C
iss
C
oss
V
DS
- Drain to Source Voltage - V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| UPA2727UT1A-E2-AZ | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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