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參數資料
| 型號： | uPA2727UT1A-E2-AZ |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應管 |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 177K |
| 代理商： | UPA2727UT1A-E2-AZ |
Data Sheet G18300EJ1V0DS
2
μ
PA2727UT1A
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
100
nA
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
| y
fs
|
V
DS
= 10 V, I
D
= 8 A
6
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 8 A
7.6
9.6
m
Ω
R
DS(on)2
V
GS
= 4.5 V, I
D
= 8 A
11
15
m
Ω
Input Capacitance
C
iss
V
DS
= 15 V,
1170
pF
Output Capacitance
C
oss
V
GS
= 0 V,
250
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
90
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 8 A,
13
ns
Rise Time
t
r
V
GS
= 10 V,
3.6
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
Ω
41
ns
Fall Time
t
f
8
ns
Total Gate Charge
Q
G
V
DD
= 15 V,
11
nC
Gate to Source Charge
Q
GS
V
GS
= 5 V,
3.8
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 16 A
3.5
nC
V
F(S-D)
I
F
= 16 A, V
GS
= 0 V
0.83
V
Reverse Recovery Time
t
rr
I
F
= 16 A, V
GS
= 0 V,
27
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
23
nC
Gate Resistance
R
G
f = 1 MHz
2.2
Ω
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
Ω
50
Ω
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
s
Duty Cycle
≤
1%
τ
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
μ
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