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參數資料
| 型號： | UPD442012AGY-DD10X-MJH |
| 廠商： | NEC Corp. |
| 英文描述： | 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 200萬位CMOS靜態(tài)RAM 128K的字由16位溫度范圍 |
| 文件頁數： | 1/24頁 |
| 文件大小： | 148K |
| 代理商： | UPD442012AGY-DD10X-MJH |
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2000
MOS INTEGRATED CIRCUIT
μ
PD442012A-X
2M-BIT CMOS STATIC RAM
128K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
DATA SHEET
Document No. M14671EJ7V0DS00 (7th edition)
Date Published July 2001 NS CP (K)
Printed in Japan
The mark
#
shows major revised points.
Description
The
μ
PD442012A-X is a high speed, low power, 2,097,152 bits (131,072 words by 16 bits) CMOS static RAM.
The
μ
PD442012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
The
μ
PD442012A-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).
Features
131,072 words by 16 bits organization
Fast access time : 50, 55, 70, 85, 100, 120 ns (MAX.)
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
Low voltage operation
(BB version : V
CC
= 2.7 to 3.6 V, BC version : V
CC
= 2.2 to 3.6 V, DD version : V
CC
= 1.8 to 2.2 V)
Low V
CC
data retention : 1.0 V (MIN.)
Operating ambient temperature : T
A
= –25 to +85 °C
Output Enable input for easy application
Two Chip Enable inputs : /CE1, CE2
Part number
Access time
Operating supply
Operating ambient
Supply current
ns (MAX.)
voltage
temperature
At operating
At standby
At data retention
V
°C
mA (MAX.)
μ
A (MAX.)
μ
A (MAX.)
μ
PD442012A-BBxxX
50
Note 1
, 55, 70, 85
2.7 to 3.6
25 to +85
30
Note 2
4
2
35
Note 3
40
Note 4
μ
PD442012A-BCxxX
70, 85, 100
2.2 to 3.6
30
μ
PD442012A-DDxxX
85, 100, 120
1.8 to 2.2
15
3
Notes 1.
V
CC
≥
3.0 V
2.
Cycle time
≥
70 ns
3.
Cycle time = 55 ns
4.
Cycle time = 50 ns
#
#
#
#
#
#
#
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