參數(shù)資料
型號(hào)： UPD442012AGY-DD10X-MJH
廠商： NEC Corp.
英文描述： 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述： 200萬位CMOS靜態(tài)RAM 128K的字由16位溫度范圍
文件頁(yè)數(shù)： 7/24頁(yè)
文件大?。?/td> 148K
代理商： UPD442012AGY-DD10X-MJH
Data Sheet M14671EJ7V0DS
7
μ
PD442012A-X
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (1/2)
Parameter
Symbol
Test condition
μ
PD442012A-BBxxX
Unit
MIN.
TYP.
MAX.
Input leakage current
I
LI
V
IN
= 0 V to V
CC
–1.0
+1.0
μ
A
I/O leakage current
I
LO
V
I/O
= 0 V to V
CC
, /CE1 = V
IH
or
–1.0
+1.0
μ
A
CE2 = V
IL
or /WE = V
IL
or /OE = V
IH
Operating supply current
I
CCA1
/CE1 = V
IL
, CE2 = V
IH
,
Cycle time = 50 ns
–
40
mA
I
I/O
= 0 mA,
Cycle time = 55 ns
–
35
Minimum cycle time
Cycle time
≥
70 ns
–
30
I
CCA2
/CE1 = V
IL
, CE2 = V
IH
,
–
4
I
I/O
= 0 mA, Cycle time =
∞
I
CCA3
/CE1
≤
0.2 V, CE2
≥
V
CC
– 0.2 V,
–
4
Cycle time = 1
μ
s, I
I/O
= 0 mA,
V
IL
≤
0.2 V, V
IH
≥
V
CC
– 0.2 V
Standby supply current
I
SB
/CE1 = V
IH
or CE2 = V
IL
or /LB = /UB = V
IH
–
0.6
mA
I
SB1
/CE1
≥
V
CC
– 0.2 V, CE2
≥
V
CC
– 0.2 V
0.3
4
μ
A
I
SB2
CE2
≤
0.2 V
0.3
4
I
SB3
/LB = /UB
≥
V
CC
– 0.2 V,
0.3
4
/CE1
≤
0.2 V, CE2
≥
V
CC
– 0.2 V
High level output voltage
V
OH
I
OH
= –0.5 mA
2.4
V
Low level output voltage
V
OL
I
OL
= 1.0 mA
0.4
V
Remarks 1.
V
IN
: Input voltage
V
I/O
: Input / Output voltage
2.
These DC characteristics are in common regardless of product specification.
#
#
#
相關(guān)PDF資料
PDF描述
UPD442012AGY-DD12X-MJH 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD442012AGY-DD85X-MJH Circular Connector; No. of Contacts:18; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:15-18 RoHS Compliant: No
UPD44325364F5-E40-EQ2 CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED
UPD44325084F5-E40-EQ2 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44325184F5-E40-EQ2 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD44321182GF-A50(A) 制造商:Renesas Electronics Corporation 功能描述:
UPD44324182BF5-E40-FQ1-A 制造商:Renesas Electronics Corporation 功能描述:RENUPD44324182BF5-E40-FQ1-A 36M-BIT(2M-W
UPD44324185BF5-E40-FQ1 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin BGA 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA
UPD44324362BF5-E40-FQ1 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA
UPD44324362BF5-E40-FQ1-A 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*