參數(shù)資料
型號(hào)： UPD4482321GF-C75
廠商： NEC Corp.
英文描述： 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
中文描述： 800萬(wàn)位CMOS同步快速靜態(tài)存儲(chǔ)器流經(jīng)手術(shù)
文件頁(yè)數(shù)： 1/28頁(yè)
文件大小： 370K
代理商： UPD4482321GF-C75
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS INTEGRATED CIRCUIT
μ
PD4482161, 4482181, 4482321, 4482361
8M-BIT CMOS SYNCHRONOUS FAST SRAM
FLOW THROUGH OPERATION
Document No. M14521EJ3V0DS00 (3rd edition)
Date Published December 2002 NS CP(K)
Printed in Japan
DATA SHEET
The mark
shows major revised points.
2000
Description
The
μ
PD4482161 is a 524,288-word by 16-bit, the
μ
PD4482181 is a 524,288-word by 18-bit, the
μ
PD4482321 is a
262,144-word by 32-bit and the
μ
PD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with
advanced CMOS technology using Full-CMOS six-transistor memory cell.
The
μ
PD4482161,
μ
PD4482181,
μ
PD4482321 and
μ
PD4482361 integrate unique synchronous peripheral circuitry, 2-bit
burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single
clock input (CLK).
The
μ
PD4482161,
μ
PD4482181,
μ
PD4482321 and
μ
PD4482361 are suitable for applications which require synchronous
operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In
the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.
The
μ
PD4482161,
μ
PD4482181,
μ
PD4482321 and
μ
PD4482361 are packaged in 100-pin PLASTIC LQFP with a 1.4
mm package thickness for high density and low capacitive loading.
Features
3.3 V or 2.5 V core supply
Synchronous operation
Operating temperature : T
A
= 0 to 70
°
C (-A65, -A75, -A85, -C75, -C85)
T
A
=
40 to
+
85
°
C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)
Internally self-timed write control
Burst read / write : Interleaved burst and linear burst sequence
Fully registered inputs for flow through operation
All registers triggered off positive clock edge
3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs
Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)
Asynchronous output enable : /G
Burst sequence selectable : MODE
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)
Separate byte write enable : /BW1 to /BW4, /BWE (
μ
PD4482321,
μ
PD4482361)
/BW1, /BW2, /BWE (
μ
PD4482161,
μ
PD4482181)
Global write enable : /GW
Three chip enables for easy depth expansion
Common I/O using three state outputs
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