- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376427 > UPD4482321GF-C75 (NEC Corp.) 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION PDF資料下載
參數(shù)資料
| 型號： | UPD4482321GF-C75 |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| 中文描述： | 800萬位CMOS同步快速靜態(tài)存儲器流經(jīng)手術(shù) |
| 文件頁數(shù)： | 12/28頁 |
| 文件大?。?/td> | 370K |
| 代理商： | UPD4482321GF-C75 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當(dāng)前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
12
μ
PD4482161, 4482181, 4482321, 4482361
Data Sheet M14521EJ3V0DS
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Notes
Supply voltage
V
DD
-A65, -A75, -A85
–0.5
+4.0
V
-A65Y, -A75Y, -A85Y
-C75, -C85
–0.5
+3.0
V
-C75Y, -C85Y
Output supply voltage
V
DD
Q
–0.5
V
DD
V
Input voltage
V
IN
–0.5
V
DD
+ 0.5
V
1, 2
Input / Output voltage
V
I/O
–0.5
V
DD
Q
+ 0.5
V
1, 2
Operating ambient
T
A
-A65, -A75, -A85, -C75, -C85
0
70
°C
temperature
-A65Y, -A75Y, -A85Y, -C75Y, -C85Y
–40
+85
Storage temperature
T
stg
–55
+125
°C
Notes 1.
–2.0 V (MIN.)(Pulse width : 2 ns)
2.
V
DD
Q + 2.3 V (MAX.)(Pulse width : 2 ns)
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions
(1/2)
Parameter
Symbol
Conditions
-A65, -A75, -A85
Unit
-A65Y, -A75Y, -A85Y
MIN.
TYP.
MAX.
Supply voltage
V
DD
3.135
3.3
3.465
V
2.5 V LVTTL interface
Output supply voltage
V
DD
Q
2.375
2.5
2.9
V
High level input voltage
V
IH
1.7
V
DD
Q
+ 0.3
V
Low level input voltage
V
IL
–0.3
Note
+0.7
V
3.3 V LVTTL interface
Output supply voltage
V
DD
Q
3.135
3.3
3.465
V
High level input voltage
V
IH
2.0
V
DD
Q
+ 0.3
V
Low level input voltage
V
IL
–0.3
Note
+0.8
V
Note
–0.8 V (MIN.)(Pulse width : 2 ns)
Recommended DC Operating Conditions
(2/2)
Parameter
Symbol
Conditions
-C75, -C85
Unit
-C75Y, -C85Y
MIN.
TYP.
MAX.
Supply voltage
V
DD
2.375
2.5
2.625
V
Output supply voltage
V
DD
Q
2.375
2.5
2.625
V
High level input voltage
V
IH
1.7
V
DD
Q
+ 0.3
V
Low level input voltage
V
IL
–0.3
Note
+0.7
V
Note
–0.8 V (MIN.)(Pulse width : 2 ns)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD4482321GF-C85 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482161 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482161GF-C75 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482161GF-C85 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482321 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD45128163G5 | 制造商:Renesas Electronics Corporation 功能描述:128 MBIT SDRAM |
| UPD45128163G5-A75-9JF | 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| UPD45128841G5-A75-9JF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP |
| UPD4516161AG5A109NF | 制造商:NEC Electronics Corporation 功能描述: |
| UPD4516161AG5-A10-9NF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。