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參數(shù)資料
| 型號： | UPD4482363GF-A50Y |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT |
| 中文描述： | 800萬位CMOS同步快速靜態(tài)存儲器流水線操作雙循環(huán)取消選擇 |
| 文件頁數(shù)： | 12/28頁 |
| 文件大小： | 300K |
| 代理商： | UPD4482363GF-A50Y |
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12
Data Sheet M14904EJ3V0DS
μ
PD4482163, 4482183, 4482323, 4482363
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Note
Input leakage current
I
LI
V
IN
(except ZZ, MODE) = 0 V to V
DD
–2
+2
μ
A
I/O leakage current
I
LO
V
I/O
= 0 V to V
DD
Q, Outputs are disabled
–2
+2
μ
A
Operating supply current
I
DD
Device selected, Cycle = MAX.
-A44
440
mA
V
IN
≤
V
IL
or V
IN
≥
V
IH
, I
I/O
= 0 mA
-A44Y
-A50
400
-A50Y
-A60
320
-A60Y
I
DD1
Suspend cycle, Cycle = MAX.
180
/AC, /AP, /ADV, /GW, /BWEs
≥
V
IH
,
V
IN
≤
V
IL
or V
IN
≥
V
IH
, I
I/O
= 0 mA
Standby supply current
I
SB
Device deselected, Cycle = 0 MHz
30
mA
V
IN
≤
V
IL
or V
IN
≥
V
IH
, All inputs are static
I
SB1
Device deselected, Cycle = 0 MHz
15
V
IN
≤
0.2 V or V
IN
≥
V
DD
–
0.2 V,
V
I/O
≤
0.2 V, All inputs are static
I
SB2
Device deselected, Cycle = MAX.
130
V
IN
≤
V
IL
or V
IN
≥
V
IH
Power down supply current
I
SBZZ
ZZ
≥
V
DD
–
0.2 V, V
I/O
≤
V
DD
Q + 0.2 V
15
mA
High level output voltage
V
OH
I
OH
=
–
4.0 mA
2.4
V
Low level output voltage
V
OL
I
OL
= +8.0 mA
0.4
V
Capacitance (T
A =
25
°
C, f = 1MHz)
Parameter
Symbol
Test conditions
MIN.
TYP.
MAX.
Unit
Input capacitance
C
IN
V
IN
= 0 V
6.0
pF
Input / Output capacitance
C
I/O
V
I/O
= 0 V
8.0
pF
Clock Input capacitance
C
clk
V
clk
= 0 V
6.0
pF
Remark
These parameters are periodically sampled and not 100% tested.
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