參數(shù)資料
型號(hào)： UPD4564163
廠商： Elpida Memory, Inc.
英文描述： 64M-bit Synchronous DRAM 4-bank, LVTTL
中文描述： 6400位同步DRAM 4銀行，LVTTL
文件頁(yè)數(shù)： 23/85頁(yè)
文件大?。?/td> 919K
代理商： UPD4564163
Data Sheet E0149N10
23
μ
PD4564441, 4564841, 4564163
7.1 Burst Length and Sequence
[Burst of Two]
Starting address
(column address A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
0
0, 1
0, 1
1
1, 0
1, 0
[Burst of Four]
Starting address
(column address A1 - A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
00
0, 1, 2, 3
0, 1, 2, 3
01
1, 2, 3, 0
1, 0, 3, 2
10
2, 3, 0, 1
2, 3, 0, 1
11
3, 0, 1, 2
3, 2, 1, 0
[Burst of Eight]
Starting address
(column address A2 - A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
Full page burst is an extension of the above tables of sequential addressing, with the length being 1,024 (for 16M
×
4
device), 512 (for 8M
×
8 device), and 256 (for 4M
×
16 device).
相關(guān)PDF資料
PDF描述
UPD4564163G5 64M-bit Synchronous DRAM 4-bank, LVTTL
UPD4564441 64M-bit Synchronous DRAM 4-bank, LVTTL
UPD4564841 64M-bit Synchronous DRAM 4-bank, LVTTL
UPD485505 LINE BUFFER 5K-WORD BY 8-BIT
UPD485505G-25 LINE BUFFER 5K-WORD BY 8-BIT
相關(guān)代理商/技術(shù)參數(shù)
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UPD4702C-A 制造商:Renesas Electronics 功能描述:Cut Tape
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