參數(shù)資料
型號(hào)： UPD4564163
廠商： Elpida Memory, Inc.
英文描述： 64M-bit Synchronous DRAM 4-bank, LVTTL
中文描述： 6400位同步DRAM 4銀行，LVTTL
文件頁(yè)數(shù)： 34/85頁(yè)
文件大?。?/td> 919K
代理商： UPD4564163
Data Sheet E0149N10
34
μ
PD4564441, 4564841, 4564163
13. Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 100
μ
s and then, execute
Power on sequence and CBR (auto) Refresh
before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
V
CC
, V
CC
Q
0.5 to +4.6
V
Voltage on any pin relative to GND
V
T
0.5 to +4.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
1
W
Operating ambient temperature
T
A
0 to 70
°
C
Storage temperature
T
stg
55 to + 125
°
C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
, V
CC
Q
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+0.3
Note1
V
Low level input voltage
V
IL
0.3
Note2
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Notes 1.
V
IH(MAX.)
= V
CC
+ 1.5
V (Pulse width
≤
5 ns)
2.
V
IL(MIN.)
= –1.5
V (Pulse width
≤
5 ns)
Pin Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A13
2.5
4
pF
C
I2
CLK, CKE, /CS, /RAS, /CAS, /WE,
DQM, UDQM, LDQM
2.5
4
Data input / output capacitance
C
I/O
DQ0 - DQ15
4
6.5
pF
相關(guān)PDF資料
PDF描述
UPD4564163G5 64M-bit Synchronous DRAM 4-bank, LVTTL
UPD4564441 64M-bit Synchronous DRAM 4-bank, LVTTL
UPD4564841 64M-bit Synchronous DRAM 4-bank, LVTTL
UPD485505 LINE BUFFER 5K-WORD BY 8-BIT
UPD485505G-25 LINE BUFFER 5K-WORD BY 8-BIT
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