參數(shù)資料
型號: UPD4564841G5
廠商: Elpida Memory, Inc.
英文描述: 64M-bit Synchronous DRAM 4-bank, LVTTL
中文描述: 6400位同步DRAM 4銀行,LVTTL
文件頁數(shù): 13/85頁
文件大?。?/td> 919K
代理商: UPD4564841G5
Data Sheet E0149N10
13
μ
PD4564441, 4564841, 4564163
Fig.7 Self refresh entry command
CLK
/WE
/CAS
/RAS
/CS
CKE
Add
A10
A12, A13
(Bank select)
Fig.8 Burst stop command in Full
Page Mode
CLK
/WE
/CAS
/RAS
/CS
CKE
Add
A10
A12, A13
(Bank select)
H
Fig.9 No operation
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
A12, A13
(Bank select)
Self refresh entry command
(/CS, /RAS, /CAS, CKE = Low, /WE = High)
After the command execution, self refresh operation continues while
CKE remains low. When CKE goes high, the
μ
PD4564xxx exits the self
refresh mode.
During self refresh mode, refresh interval and refresh operation are
performed internally, so there is no need for external control.
Before executing self refresh, all banks must be precharged.
Burst stop command
(/CS, /WE = Low, /RAS, /CAS = High)
This command can stop the current burst operation.
No operation
(/CS = Low, /RAS, /CAS, /WE = High)
This command is not an execution command. No operations begin or
terminate by this command.
相關(guān)PDF資料
PDF描述
UPD4564163 64M-bit Synchronous DRAM 4-bank, LVTTL
UPD4564163G5 64M-bit Synchronous DRAM 4-bank, LVTTL
UPD4564441 64M-bit Synchronous DRAM 4-bank, LVTTL
UPD4564841 64M-bit Synchronous DRAM 4-bank, LVTTL
UPD485505 LINE BUFFER 5K-WORD BY 8-BIT
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