參數(shù)資料
型號: UPD46128512-X
廠商: NEC Corp.
英文描述: 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述: 128兆位CMOS移動指明內(nèi)存800萬字由16位溫度范圍
文件頁數(shù): 69/82頁
文件大?。?/td> 817K
代理商: UPD46128512-X
Preliminary Data Sheet M17507EJ2V0DS
69
μ
PD46128512-X
Figure 8-12. Synchronous Burst Write Termination Timing Chart
T0
T1
T2
T3
T4
T0
T1
T2
T3
T4
CLK (Input)
/ADV (Input)
Address (Input)
/CE1 (Input)
/WAIT (Output)
/OE (Input)
DQ (Input/Output)
/LB, /UB (Input)
/WE (Input)
t
CH
t
CL
D0
t
ACS
t
CLWA
t
CLWA
t
CSV
t
VPL
t
CHCL
t
CHCL
t
ACS
t
CSV
t
VPL
t
WRB
t
CES
t
CES
t
ACH
t
ACH
t
CHV
t
AH
t
CHV
t
AH
RL = 5
t
CHV
t
TRB
t
CHV
t
CEH
t
CYCLE
High-Z
High-Z
Valid
High-Z
High-Z
t
WDH
t
WDS
D0
t
WDH
t
WDS
H
t
CEWA
t
CES
t
CEWA
t
BC
t
WES
Valid
t
CWHZ
High-Z
Remarks 1.
The above timing chart assumes Read Latency is 5.
2.
CE2 should be fixed HIGH.
3.
Valid clock edge is the rising edge.
4.
t
BC
is defined from CLK rising edge of RL
1 to /LB and /UB = LOW.
5.
Burst write suspend is valid after latching the first write data
6.
In case continuous burst write is set, /CE1 de-assert is needed for burst write termination.
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