參數(shù)資料
型號(hào): UPG2008TB-E3
廠商: NEC Corp.
英文描述: GaAs INTEGRATED CIRCUIT
中文描述: 砷化鎵集成電路
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 60K
代理商: UPG2008TB-E3
Data Sheet PG10193EJ01V0DS
6
μ
PG2008TB
TEST CONDITION: T
A
= +25
°
C, f = 1 GHz, V
cont1/2
= 0 V3.0 V, OUT2 side is termination
INPUT POWER vs. OUTPUT POWER
Input Power P
in
(dBm)
O
o
30
20
P–1 = +26.4 dBm
15
10
30
25
20
15
10
5
Remark
The graphs indicate nominal characteristics.
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