參數(shù)資料
型號: V53C16256L
廠商: Mosel Vitelic, Corp.
英文描述: 3.3 Volt 256K x 16 Fast Page Mode CMOS Dynamic RAM(3.3V 256Kx16快速頁面模式CMOS動態(tài)RAM)
中文描述: 3.3伏256K × 16快速頁面模式的CMOS動態(tài)RAM(3.3 256Kx16快速頁面模式的CMOS動態(tài)內(nèi)存)
文件頁數(shù): 5/20頁
文件大?。?/td> 148K
代理商: V53C16256L
5
MOSEL V ITELIC
V53C16256L
V53C16256L Rev. 2.5 February 1999
AC Characteristics
T
A
= 0
°
C to 70
AC Test conditions, input pulse levels 0 to 3V
°
C, V
CC
= 3.3 V
±
0.3V, V
SS
= 0V unless otherwise noted
#
JEDEC
Symbol
Symbol Parameter
35
40
45
50
60
Unit Notes
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
1
t
RL1RH1
t
RAS
RAS Pulse Width
35
75K
40
75
45
75K
50
75K
60
75K
ns
2
t
RL2RL2
t
RC
Read or Write Cycle
Time
70
75
80
90
110
ns
3
t
RH2RL2
t
RP
RAS Precharge Time
25
25
25
30
40
ns
4
t
RL1CH1
t
CSH
CAS Hold Time
35
40
45
50
60
ns
5
t
CL1CH1
t
CAS
CAS Pulse Width
12
12
13
14
15
ns
6
t
RL1CL1
t
RCD
RAS to CAS Delay
16
23
17
28
18
32
19
36
20
45
ns
7
t
WH2CL2
t
RCS
Read Command
Setup Time
0
0
0
0
0
ns
4
8
t
AVRL2
t
ASR
Row Address
Setup Time
0
0
0
0
0
ns
9
t
RL1AX
t
RAH
Row Address
Hold Time
6
7
8
9
10
ns
10
t
AVCL2
t
ASC
Column Address
Setup Time
0
0
0
0
0
ns
11
t
CL1AX
t
CAH
Column Address
Hold Time
4
5
6
7
10
ns
12
t
CL1RH1(R)
t
RSH (R)
RAS Hold Time
(Read Cycle)
12
12
13
14
15
ns
13
t
CH2RL2
t
CRP
CAS to RAS
Precharge Time
5
5
5
5
5
ns
14
t
CH2WX
t
RCH
Read Command
Hold Time
Referenced to CAS
0
0
0
0
0
ns
5
15
t
RH2WX
t
RRH
Read Command
Hold Time
Referenced to RAS
0
0
0
0
0
ns
5
16
t
OEL1RH2
t
ROH
RAS Hold Time
Referenced to OE
8
8
9
10
10
ns
17
t
GL1QV
t
OAC
Access Time
from OE
12
12
13
14
15
ns
18
t
CL1QV
t
CAC
Access Time
from CAS
12
12
13
14
15
ns
6, 7
19
t
RL1QV
t
RAC
Access Time
from RAS
35
45
50
55
60
ns
6, 8, 9
20
t
AVQV
t
CAA
Access Time from
Column Address
18
20
22
24
30
ns
6, 7, 10
21
t
CL1QX
t
LZ
OE or CAS to Low-Z
Output
0
0
0
0
0
ns
16
相關(guān)PDF資料
PDF描述
V53C16256 256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
V53C16256H 256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
V53C16256SH 256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH
V53C16258H HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
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