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參數(shù)資料
| 型號(hào)： | V53C364165A |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 3.3 Volt 4M X 16 EDO Page Mode CMOS Dynamic RAM(3.3V 4Mx16 EDO頁(yè)面模式CMOS動(dòng)態(tài)RAM) |
| 中文描述： | 3.3伏特4米× 16 EDO公司頁(yè)面模式的CMOS動(dòng)態(tài)RAM（3.3 4Mx16 EDO公司頁(yè)面模式的CMOS動(dòng)態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 4/26頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | V53C364165A |
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4
V53C364165A Rev. 0.2 September 1998
MOSEL V ITELIC
V53C364165A
DC and Operating Characteristics
T
A
= 0
°
C to 70
°
C, V
CC
(1-2)
= 3.3 V
±
0.3 V, V
SS
= 0 V, unless otherwise specified.
Symbol
Parameter
Access
Time
V53C364165A
Unit
Test Conditions
Notes
Min.
Typ.
Max.
I
LI
Input Leakage Current
(any input pin)
–2
2
μ
A
V
SS
≤
V
IN
≤
V
CC
I
LO
Output Leakage Current
(for High-Z State)
–2
2
μ
A
V
RAS, CAS at V
SS
≤
V
OUT
≤
V
CC
IH
I
CC1
V
Operating
CC
Supply Current,
40
125
mA
t
RC
= t
RC
(min.)
2, 3, 4
50
100
60
84
I
CC2
V
TTL Standby
CC
Supply Current,
1
mA
RAS, CAS at V
other inputs
IH
≥
V
SS
I
CC3
V
RAS-Only Refresh
CC
Supply Current,
40
125
mA
t
RC
= t
RC
(min.)
2, 4
50
100
60
84
I
CC4
V
EDO Page Mode
Operation
CC
Supply Current,
40
140
mA
Minimum Cycle
2, 3, 4
50
105
60
85
I
CC5
V
CMOS Standby
CC
Supply Current,
120
μ
A
RAS
CAS
≥
≥
V
V
CC
– 0.2 V,
– 0.2 V
CC
I
CC5
V
CMOS Standby (L-Version)
CC
Supply Current,
100
μ
A
RAS
CAS
≥
≥
V
V
CC
– 0.2 V,
– 0.2 V
CC
I
CC6
Average Self Refresh Current
CBR cycle with t
(L-version only)
CAS held low, WE = V
Address and D
IN
or 0.2V
RAS
> t
RASS
min.,
CC
– 0.2V
– 0.2V,
= V
CC
400
μ
A
I
CC7
V
during CAS-before-RAS Refresh
CC
Supply Current,
40
170
mA
2, 4
50
140
60
115
V
IL
Input Low Voltage
–0.3
0.8
V
1
V
IH
Input High Voltage
2.0
V
CC
+0.3
V
1
V
OL
Output Low Voltage (LVTTL)
0.4
V
I
OL
= 2 mA
1
V
OL
Output Low Voltage (LVCMOS)
0.2
V
I
OL
= 100
μ
A
1
V
OH
Output High Voltage (LVTTL)
2.4
V
I
OH
= –2 mA
V
OH
Output High Voltage (LVCMOS)
V
CC
–0.2
V
I
OH
= –100
μ
A
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