參數(shù)資料
型號: V53C364165A
廠商: Mosel Vitelic, Corp.
英文描述: 3.3 Volt 4M X 16 EDO Page Mode CMOS Dynamic RAM(3.3V 4Mx16 EDO頁面模式CMOS動態(tài)RAM)
中文描述: 3.3伏特4米× 16 EDO公司頁面模式的CMOS動態(tài)RAM(3.3 4Mx16 EDO公司頁面模式的CMOS動態(tài)內(nèi)存)
文件頁數(shù): 8/26頁
文件大?。?/td> 167K
代理商: V53C364165A
8
V53C364165A Rev. 0.2 September 1998
MOSEL V ITELIC
V53C364165A
Notes:
1.
All voltages are referenced to V
SS
.
V
IH
may overshoot to V
CC
+ 0.2V for pulse widths of < 4ns with 3.3V. V
IL
may undershoot to -2.0V for pulse width
< 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference.
2.
I
CC1
, I
CC3
, I
CC4
and I
CC6
and I
CC7
depend on cycle rate.
3.
I
CC1
and I
CC4
depend on output loading. Specified values are measured with the output open.
4.
Address can be changed once or less while RAS = V
IL
. In the case of I
CC4
it can be changed once or less during a
hyper page mode cycle (t
PC
).
5.
An initial pause of 100
μ
s is required after power-up followed by 8 RAS-only-refresh cycles, before proper device
operation is achieved. In case of using internal refresh counter, a minimum of 8 CAS-before-RAS initialization
cycles instead of 8 RAS cycles are required.
6.
AC measurements assume t
T
= 2 ns.
7.
V
IH (min.)
and V
IL (max.)
are reference levels for measuring timing of input signals. Also, transition times are measured
between V
IH
and V
IL
.
8.
Measured with the specified current load and 100 pF at V
OH
= 2.0 V and V
OL
= 0.8 V.
9.
Operation within the t
RCD (max.)
limit ensures that t
RAC (max.)
can be met. t
RCD (max.)
is specified as a reference point
only: If t
RCD
is greater than the specified t
RCD (max.)
limit, then access time is controlled by t
CAC
.
10.
Operation within the t
RAD (max.)
limit ensures that t
RAC (max.)
can be met. t
RAD (max.)
is specified as a reference point
only: If t
RAD
is greater than the specified t
RAD (max.)
limit, then access time is controlled by t
CAA
.
11.
Either t
RCH
or t
RRH
must be satisfied for a read cycle.
12.
t
OFF (max.)
and t
OEZ (max.)
define the time at which the outputs achieve the open-circuit condition and are not
referenced to output voltage levels.
13.
Either t
DZC
or t
DZO
must be satisfied.
14.
Either t
CDD
or t
ODD
must be satisfied.
CAS before RAS Refresh Cycle
56
t
CSR
CAS setup time
5
5
5
ns
57
t
CHR
CAS hold time
5
5
10
ns
58
t
RPC
RAS to CAS precharge time
5
5
5
ns
59
t
WRP
Write to RAS precharge time
5
5
10
ns
60
t
WRH
Write hold time referenced to RAS
5
5
10
ns
Self Refresh Cycle (L-Version)
61
t
RASS
RAS pulse width
100K
100K
100K
ns
17
62
t
RPS
RAS precharge time
69
84
104
ns
17
63
t
CHS
CAS hold time
50
50
50
ns
17
AC Characteristics
(5,6)
(Cont’d)
T
A
= 0 to 70
°
C,V
CC
= 3.3 V
±
0.3V , t
T
= 2 ns
#
Symbol
Parameter
-40
- 50
- 60
Unit
Notes
Min.
Max.
Min.
Max.
Min.
Max.
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