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參數(shù)資料
| 型號(hào)： | V54C3256164VBUC |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 |
| 中文描述： | 低功耗的256Mbit SDRAM的3.3伏，54球的BGA SOC的54引腳TSOPII 16米x 16 |
| 文件頁(yè)數(shù)： | 11/45頁(yè) |
| 文件大?。?/td> | 651K |
| 代理商： | V54C3256164VBUC |
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11
V54C3256164VBUC/T Rev. 1.1 February 2003
MOSEL VITELIC
V54C3256164VBUC/T
Operating Currents
(T
A
= 0 to 70
°
C, V
CC
= 3.3V
±
0.3V)
(Recommended Operating Conditions unless otherwise noted)
Notes:
7.
These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of t
CK
and
t
. Input signals are changed one time during t
.
These parameter depend on output loading. Specified values are obtained with output open.
8.
Symbol
Parameter & Test Condition
Max.
Unit
Note
-6
-7 / -7PC
-8PC
ICC1
Operating Current
t
RC
= t
RCMIN.
, t
RC
= t
CKMIN
.
Active-precharge command cycling,
without Burst Operation
1 bank operation
90
80
80
mA
7
ICC2P
Precharge Standby Current
in Power Down Mode
CS =V
IH
, CKE
≤
V
IL(max)
t
CK
= min.
2
2
2
mA
7
ICC2PS
t
CK
= Infinity
1
1
1
mA
7
ICC2N
Precharge Standby Current
in Non-Power Down Mode
CS =V
IH
, CKE
≥
V
IL(max)
t
CK
= min.
55
45
35
mA
ICC2NS
t
CK
= Infinity
5
5
5
mA
ICC3N
No Operating Current
t
CK
= min, CS = V
IH(min)
bank ; active state ( 4 banks)
CKE
≥
V
IH(MIN.)
65
55
45
mA
ICC3P
CKE
≤
V
IL(MAX.)
(Power down mode)
10
10
10
mA
ICC4
Burst Operating Current
t
CK
= min
Read/Write command cycling
170
150
120
mA
7,8
ICC5
Auto Refresh Current
t
CK
= min
Auto Refresh command cycling
270
240
220
mA
7
ICC6
Self Refresh Current
Self Refresh Mode, CKE
≤
0.2V
3
3
3
mA
L-version
(B component rev)
1.0
1.0
1.0
mA
U-version
(B component rev)
0.6
0.6
0.6
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V54C3256164VBUT | LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 |
| V54C3256404VB | 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
| V54C3256404VS | 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
| V54C3256404VT | 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
| V54C3256804VB | 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V54C3256164VBUT | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 |
| V54C3256164VS | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
| V54C3256164VT | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
| V54C3256404VAB | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
| V54C3256404VAT | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
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