參數(shù)資料
型號(hào): V54C3256164VBUC
廠商: Mosel Vitelic, Corp.
英文描述: LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
中文描述: 低功耗的256Mbit SDRAM的3.3伏,54球的BGA SOC的54引腳TSOPII 16米x 16
文件頁(yè)數(shù): 20/45頁(yè)
文件大小: 651K
代理商: V54C3256164VBUC
20
V54C3256164VBUC/T Rev. 1.1 February 2003
MOSEL VITELIC
V54C3256164VBUC/T
6.2 Write Interrupted by a Read
(Burst Length = 4, CAS latency = 2, 3)
7. Burst Write with Auto-Precharge
Burst Length = 2, CAS latency = 2, 3)
COMMAND
NOP
WRITE A
READ B
NOP
NOP
NOP
NOP
NOP
NOP
t
CK2,
I/O’s
CAS latency = 2
DIN A0
t
CK3,
I/O’s
CAS latency = 3
DIN A0
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT B3
DOUT B0
DOUT B1
DOUT B2
DOUT B3
don’t care
don’t care
don’t care
DOUT B0
DOUT B1
DOUT B2
Input data must be removed from the I/O’s at least one clock
cycle before the Read dataAPpears on the outputs to avoid
data contention.
COMMAND
NOP
NOP
NOP
WRITE A
Auto-Precharge
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
BANK A
ACTIVE
NOP
NOP
DIN A0
DIN A1
I/O’s
CAS latency = 3
I/O’s
CAS latency = 2
Begin Autoprecharge
Bank can be reactivated after trp
t
WR
t
RP
DIN A0
DIN A1
t
WR
t
RP
NOP
*
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