參數(shù)資料
型號(hào): V54C3256164VBUC
廠商: Mosel Vitelic, Corp.
英文描述: LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
中文描述: 低功耗的256Mbit SDRAM的3.3伏,54球的BGA SOC的54引腳TSOPII 16米x 16
文件頁(yè)數(shù): 12/45頁(yè)
文件大?。?/td> 651K
代理商: V54C3256164VBUC
12
V54C3256164VBUC/T Rev. 1.1 February 2003
MOSEL VITELIC
V54C3256164VBUC/T
AC Characteristics
1,2, 3
T
A
= 0 to 70 °C; V
SS
= 0 V; V
DD
= 3.3 V ± 0.3 V, t
T
= 1 ns
#
Symbol
Parameter
Limit Values
Unit
Note
-6
-7PC
-7
-8PC
Min. Max. Min. Max. Min. Max. Min. Max.
Clock and Clock Enable
1
t
CK
Clock Cycle Time
CAS Latency = 3
CAS Latency = 2
6
7.5
7
7.5
7
10
8
10
s
ns
ns
2
t
CK
Clock Frequency
CAS Latency = 3
CAS Latency = 2
166
133
143
133
143
100
125
100
MHz
MHz
3
t
AC
Access Time from Clock
CAS Latency = 3
CAS Latency = 2
_
5.4
5.4
_
5.4
5.4
_
5.4
6
_
6
6
ns
ns
2, 4
4
t
CH
Clock High Pulse Width
2.5
2.5
2.5
3
ns
5
t
CL
Clock Low Pulse Width
2.5
2.5
2.5
3
ns
6
t
T
Transition Tim
0.3
1.2
0.3
1.2
0.3
1.2
0.5
10
ns
Setup and Hold Times
7
t
IS
Input Setup Time
1.5
1.5
1.5
2
ns
5
8
t
IH
Input Hold Time
0.8
0.8
0.8
1
ns
5
9
t
CKS
Input Setup Time
1.5
1.5
1.5
2
ns
5
10
t
CKH
CKE Hold Time
0.8
0.8
0.8
1
ns
5
11
t
RSC
Mode Register Set-up Time
12
14
14
16
ns
12
t
SB
Power Down Mode Entry Time
0
6
0
7
0
7
0
8
ns
Common Parameters
13
t
RCD
Row to Column Delay Time
12
15
15
20
ns
6
14
t
RP
Row Precharge Time
15
15
15
20
ns
6
15
t
RAS
Row Active Time
40
100K
42
100K
42
100K
45
100k
ns
6
16
t
RC
Row Cycle Time
60
60
60
60
ns
6
17
t
RRD
Activate(a) to Activate(b) Command Period
12
14
14
16
ns
6
18
t
CCD
CAS(a) to CAS(b) Command Period
1
1
1
1
CLK
Refresh Cycle
19
t
REF
Refresh Period (8192 cycles)
64
64
64
64
ms
20
t
SREX
Self Refresh Exit Time
1
1
1
1
CLK
相關(guān)PDF資料
PDF描述
V54C3256164VBUT LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
V54C3256404VB 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
V54C3256404VS 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
V54C3256404VT 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
V54C3256804VB 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V54C3256164VBUT 制造商:MOSEL 制造商全稱:MOSEL 功能描述:LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
V54C3256164VS 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
V54C3256164VT 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
V54C3256404VAB 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
V54C3256404VAT 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4