參數(shù)資料
型號： V827464K24SATGD3
廠商： PROMOS TECHNOLOGIES INC
元件分類： DRAM
英文描述： 64M X 72 DDR DRAM MODULE, 0.65 ns, DMA184
封裝： DIMM-184
文件頁數(shù)： 11/14頁
文件大?。?/td> 206K
代理商： V827464K24SATGD3
6
ProMOS TECHNOLOGIES
V827464K24SA
V827464K24SA Rev. 1.2 April 2006
26
DDR SDRAM Access time from clock at 3rd highest
CL
±0.75ns ±0.75ns
-
75h
00h
27
Minimum row precharge time (=tRP)
15ns
18ns
15ns
20ns
3Ch 3Ch
48h
3Ch
50h
28
Minimum row activate to row active delay (=tRRD)
10ns
12ns
15ns
28h
30h
3Ch 3Ch
29
Minimum RAS to CAS delay (=tRCD)
15ns
18ns
15ns
20ns
3Ch 3Ch
48h
3Ch
50h
30
Minimum active to precharge time (=tRAS)
40ns
42ns
45ns
28h
2Ah
2Dh 2Dh
31
Module ROW density
256MB
40h
32
Command and address signal input setup time
0.6ns
0.75ns
0.9ns
60h
75h
90h
33
Command and address signal input hold time
0.6ns
0.75ns
0.9ns
60h
75h
90h
34
Data signal input setup time
0.4ns
0.45ns
0.5ns
40h
45h
50h
35
Data signal input hold time
0.4ns
0.45ns
0.5ns
40h
45h
50h
36-40 Superset information (may be used in future)
00h
41
SDRAM device minimum active to active/auto-refresh
time (=tRC)
60ns
65ns
3Ch 3Ch 3Ch
41h
42
SDRAM device minimum active to autorefresh to ac-
tive/auto-refresh time (=tRFC)
70ns
72ns
75ns
46h
48h
4Bh
43
SDRAM device maximum device cycle time (=tCK
MAX)
12ns
30h
44
SDRAM device maximum skew between DQS and
DQ signals (=tDQSQ)
0.4ns
0.4ns 0.45 ns 0.5ns
0.5ns
28h
2Dh
32h
45
SDRAM device maximum read datahold skew factor
(=tQHS)
0.55ns 0.55ns 0.60 ns 0.75 ns 0.75 ns 55h
55h
60h
75h
46-61 Superset information (may be used in future)
-
00h
62
SPD data revision code
Initial release
11h
00h
63
Checksum for Bytes 0 ~ 62
-
B6h
D1h
5Eh DDh 35h
64
Manufacturer JEDEC ID code
ProMOS
40h
65 -71 ....... Manufacturer JEDEC ID code
00h
72
Manufacturing location
02=Taiwan 05=China 0A=S-CH
73-90 Module part number (ASCII)
V827464K24SA
91
Manufacturer revison code (For PCB)
0
00
92
Manufacturer revison code (For component)
0
00
93
Manufacturing date (Year)
-
94
Manufacturing date (Week)
-
95~
98
Assembly serial #
-
Byte
#
Function described
Function Supported
Hex value
D0
D3
C0
B1
B0
D0
D3
C0
B1
B0
Serial Presence Detect Information (cont.)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V827464N24S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE
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V82MA3B 功能描述:壓敏電阻 82V 40A 120pF RoHS:否 制造商:EPCOS 產(chǎn)品:MLV 電壓額定值 DC:22 V 電壓額定值 AC:17 V 鉗位電壓:50 V 直徑: 峰值浪涌電流:30 A 浪涌能量額定值:75 mJ 電容:74.2 pF 工作溫度范圍:- 55 C to + 125 C 安裝:SMD/SMT 封裝:Reel
V82MA3S 功能描述:壓敏電阻 3MM Axial RoHS:否 制造商:EPCOS 產(chǎn)品:MLV 電壓額定值 DC:22 V 電壓額定值 AC:17 V 鉗位電壓:50 V 直徑: 峰值浪涌電流:30 A 浪涌能量額定值:75 mJ 電容:74.2 pF 工作溫度范圍:- 55 C to + 125 C 安裝:SMD/SMT 封裝:Reel
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