參數(shù)資料
型號(hào)： V827464K24SATGD3
廠商： PROMOS TECHNOLOGIES INC
元件分類： DRAM
英文描述： 64M X 72 DDR DRAM MODULE, 0.65 ns, DMA184
封裝： DIMM-184
文件頁(yè)數(shù)： 3/14頁(yè)
文件大?。?/td> 206K
代理商： V827464K24SATGD3
ProMOS TECHNOLOGIES
V827464K24SA
11
V827464K24SA Rev.1.2 April 2006
AC Characteristics (cont.)
Notes: 1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter.
2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, CS, RAS, CAS, WE.
3. For command/address input slew rate >=1.0V/ns
4. For command/address input slew rate >=0.5V/ns and <1.0V/ns
5. CK, CK slew rates are >=1.0V/ns
6. These parameters guarantee device timing, but they are not necessarily tested on each device, and they may be guaranteed
by design or tester correlation.
7. Data latched at both rising and falling edges of Data Strobes(DQS) : DQ, DM
8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete
Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM.
Absolute Maximum Ratings
Note: Operation at above absolute maximum rating can adversely affect device reliability
Data-in Hold Time to DQS-In (DQ &
DM)
tDH
0.40
-
0.40
-
0.45
-
0.5
-
0.5
-
ns
7
DQ & DM Input Pulse Width
tDIPW
1.75
-
1.75
-
1.75
-
1.75
-
1.75
-
ns
Read DQS Preamble Time
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
CLK
Read DQS Postamble Time
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
CLK
Write DQS Preamble Setup Time
tWPRES
0
-
0
-
0
-
0
-
0
-
CLK
Write DQS Preamble Hold Time
tWPREH 0.25
-
0.25
-
0.25
-
0.25
-
0.25
-
CLK
Write DQS Postamble Time
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
CLK
Mode Register Set Delay
tMRD
2-
2
-
2
-
CLK
Power Down Exit Time to any com-
mand
tXPDN
1
-
1
-
1
-
1
-
1
-
CLK
Exit Self Refresh to Non-Read Com-
mand
tXSNR
200
-
200
-
200
-
75
-
75
-
CLK
Exit Self Refresh to Read Command
tXSRD
200
-
200
-
200
-
200
-
200
-
CLK
8
Average Periodic Refresh Interval
tREFI
-
7.8
-
7.8
-
7.8
-
7.8
-
7.8
us
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
°C
Storage Temperature
TSTG
-55 ~ 125
°C
Voltage on Any Pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD relative to VSS
VDD
-0.5 ~ 3.6
V
Voltage on VDDQ relative to VSS
VDDQ
-0.5 ~ 3.6
V
Output Short Circuit Current
IOS
50
mA
Power Dissipation
PD
9W
Soldering Temperature Time
TSOLDER
260 10
°C Sec
Parameter
Sym-
bol
(DDR400A)
D0
(DDR400B)
D3
(DDR333)
C0
(DDR266A)
B1
(DDR266B)
B0
Unit Note
Min
Max Min
Max
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