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參數(shù)資料
| 型號： | VND810MSP13TR |
| 廠商： | 意法半導體 |
| 英文描述： | DOUBLE CHANNEL HIGH SIDE DRIVER |
| 中文描述： | 雙通道高邊驅(qū)動器 |
| 文件頁數(shù)： | 18/18頁 |
| 文件大?。?/td> | 263K |
| 代理商： | VND810MSP13TR |
18/18
VND810SP
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相關(guān)PDF資料 |
PDF描述 |
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| VND810SP | DOUBLE CHANNEL HIGH SIDE DRIVER |
| VND830ASP | DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY |
| VND830ASP13TR | DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY |
| VND830LSP | DOUBLE CHANNEL HIGH SIDE DRIVER |
| VND830LSP13TR | DOUBLE CHANNEL HIGH SIDE DRIVER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VND810MSP-E | 功能描述:功率驅(qū)動器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND810MSPTR-E | 功能描述:功率驅(qū)動器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND810P-E | 功能描述:功率驅(qū)動器IC STD VIPower 36V 3.5A Double Ch 160mOhm RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND810PEP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DOUBLE CHANNEL HIGH SIDE DRIVER |
| VND810PEP-E | 功能描述:功率驅(qū)動器IC DOUBLE Ch Hi SIDE DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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