參數(shù)資料
型號(hào): VND830MSP13TR
廠商: 意法半導(dǎo)體
英文描述: DOUBLE CHANNEL HIGH SIDE DRIVER
中文描述: 雙通道高邊驅(qū)動(dòng)器
文件頁(yè)數(shù): 9/18頁(yè)
文件大?。?/td> 266K
代理商: VND830MSP13TR
9/18
VND830SP
μ
C I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the V
line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
prot
)
in line to prevent the
μ
C I/Os pins to latch-up.
The value of these resistors is a compromise between
the leakage current of
μ
C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of
μ
C I/Os.
-V
CCpeak
/I
latchup
R
prot
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
20mA; V
OH
μ
C
4.5V
5k
R
prot
65k
.
Recommended R
prot
value is 10k
.
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up
resistor (R
PU
) connected between OUTPUT pin and a
positive supply voltage (V
PU
) like the +5V line used to
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
1) no false open load indication when load is connected:
in this case we have to avoid V
OUT
to be higher than
V
Olmin
; this results in the following condition
V
OUT
=(V
PU
/(R
L
+R
PU
))R
L
<V
Olmin.
2) no misdetection when load is disconnected: in this
case the V
OUT
has to be higher than V
OLmax
; this
results in the following condition R
PU
<(V
PU–
V
OLmax
)/
I
L(off2)
.
Because I
s(OFF)
may significantly increase if V
out
is pulled
high (up to several mA), the pull-up resistor R
PU
should
be connected to a supply that is switched OFF when the
module is in standby.
The values of V
OLmin
, V
OLmax
and I
L(off2)
are available in
the Electrical Characteristics section.
V
OL
V batt.
V
PU
R
PU
R
L
R
DRIVER
+
LOGIC
+
-
INPUT
STATUS
V
CC
OUT
GROUND
I
L(off2)
Open Load detection in off state
相關(guān)PDF資料
PDF描述
VND920P DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
VND920 DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
VND92013TR DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
VNDB1CHP TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | CHIP
VNDN1CHP TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VND830MSP-E 功能描述:功率驅(qū)動(dòng)器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VND830MSPTR-E 功能描述:功率驅(qū)動(dòng)器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VND830P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DOUBLE CHANNEL HIGH SIDE DRIVER
VND830P-E 功能描述:電源開關(guān) IC - 配電 Double Ch High Side 36V VCC 65mOhm 9.5A RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻(最大值):85 mOhms 開啟時(shí)間(最大值):400 us 關(guān)閉時(shí)間(最大值):20 us 工作電源電壓:3.2 V to 6.5 V 電源電流(最大值): 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
VND830PEP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DOUBLE CHANNEL HIGH SIDE DRIVER