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參數(shù)資料
| 型號： | W72M64V-XBX |
| 英文描述： | Flash MCP |
| 中文描述： | 閃存MCP的 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 160K |
| 代理商： | W72M64V-XBX |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
W72M64V-X BX
Parameter
Input Leakage Current
Symbol
I
LI
Conditions
Min
-10
Max
10
Unit
μA
V
CC
= 3.6V, V
IN
= GND to V
CC
Output Leakage Current
I
LO
V
CC
= 3.6V, V
OUT
= GND to V
CC
-10
10
μA
V
CC
Active Current for Read (1)
I
CC1
CS = V
IL
, OE = V
IH
, f = 5MHz
65
mA
V
CC
Active Current for Program or Erase (2,3)
I
CC2
CS = V
IL
, OE = V
IH,
WE = V
IL
120
mA
V
CC
Standby Current (2)
V
CC
Reset Current (2)
Automatic Sleep Mode (2,4)
I
CC3
I
CC4
I
CC5
CS = RESET = V
CC
±
0.3V
RESET = V
SS
± 0.3V
V
IH
= V
CC ±
0.3V;
V
IL
= V
SS ±
0.3V
CS = V
IL,
OE
=
V
IH
CS = V
IL,
OE
=
V
IH
20
20
μA
μA
20
180
180
μA
mA
mA
V
CC
Active Read-While-Program Current (1,2)
V
CC
Active Program-While-Erase Current (1,2)
V
CC
Active Program-While-Erase-Suspended
Current (2,5)
A
CC
Accelerated Program Current
I
CC6
I
CC7
I
CC8
CS = V
IL,
OE
=
V
IH
A
CC
Pin
CS = V
IL,
OE
=
V
IH
V
CC
Pin
140
40
120
0.8
mA
I
ACC
mA
V
V
Input Low Voltage
Input High Voltage
Voltage for WP/ACC Sector
Protect/Unprotect and Program Acceleration
Voltage for Autoselect and Temporary
Sector Unprotect
Output Low Voltage
V
IL
V
IH
-0.5
0.7 x Vcc
Vcc + 0.3
V
HH
Vcc = 3.0V + 0.3V
8.5
9.5
V
V
ID
V
O
L
Vcc = 3.0V + 0.3V
I
OL
= 4.0 mA, V
CC
= 3.0V
8.5
12.5
0.45
V
V
Output High Voltage
Low V
CC
Lock-Out Voltage (5)
V
OH1
V
LKO
I
OH
= -2.0 mA, V
CC
= 3.0V
0.85
X
V
CC
2.3
V
V
2.5
ABSOLUTE MAXIMUM RATINGS
NOTES:
1.
permanent damage to the device. Extended operation at the maximum
levels may degrade performance and affect reliability.
Stresses above the absolute maximum rating may cause
Parameter
Operating Temperature
Supply Voltage Range (V
CC
)
Signal Voltage Range
Storage Temperature Range
Endurance (write/erase cycles)
Unit
°C
V
V
°C
cycles
-55 to +125
-0.5 to +4.0
-0.5 to Vcc +0.5
-55 to +150
1,000,000 min.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
V
CC
T
A
T
A
3.0
-55
-40
3.6
+125
+85
V
°C
°C
CAPACITANCE
(T
A
= +25°C)
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 3.3V ± 0.3V, T
A
= -55°C to +125°C)
NOTES:
1.
The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency
component typically is less than 8 mA/MHz, with OE at V
IH
.
2.
Maximum I
CC
specifications are tested with V
CC
= V
CC
MAX
3.
I
CC
active while Embedded Algorithm (program or erase) is in progress.
4.
Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30ns.
5.
Not 100% tested.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
Pattern Data
Retention Time
150°C
125°C
10
20
Years
Years
Parameter
Symbol
Conditions
Max
Unit
WE
1-4
capacitance
C
WE
V
IN
= 0 V, f = 1.0 MHz
25
pF
CS
1-4
capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
25
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
12
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
25
pF
RESET capacitance
C
RS
V
IN
= 0 V, f = 1.0 MHz
20
pF
RY/BY capacitance
C
RB
V
IN
= 0 V, f = 1.0 MHz
20
pF
WP/A
CC
capacitance
C
WA
V
IN
= 0 V, f = 1.0 MHz
30
pF
This parameter is guaranteed by design but not tested.
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