參數(shù)資料
型號: W78M32VP110BM
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: PROM
英文描述: 8M X 32 FLASH 3.3V PROM, 110 ns, PBGA159
封裝: 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
文件頁數(shù): 20/51頁
文件大?。?/td> 1637K
代理商: W78M32VP110BM
27
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W78M32VP-XBX
January 2010
Rev. 12
White Electronic Designs Corp. reserves the right to change products or specications without notice.
TABLE 36 AC CHARACTERISTICS - WRITE/ERASE/PROGRAM OPERATIONS - WE# CONTROLLED
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-100
Min
Max
-120
Min
Max
Unit
Write Cycle Time (3)
tAVAV
tWC
110
120
ns
Chip Select Setup Time (3)
tELWL
tCS
00
ns
Write Enable Pulse Width
tWLWH
tWP
35
ns
Address Setup Time
tAVWL
tAS
00
ns
Data Setup Time
tDVWH
tDS
30
ns
Data Hold Time
tWHDX
tDH
00
ns
Address Hold Time
tWLAX
tAH
45
ns
Write Enable Pulse Width High (3)
tWHWL
tWPH
30
ns
Duration of Byte Programming Operation (1)
tWHWH1
480
μs
Sector Erase (2)
tWHWH2
5
sec
Read Recovery Time before Write (3)
tGHWL
00
ns
VCC Setup Time (3)
tVCS
35
μs
Chip Programming Time (4)
200
sec
Address Setup Time to OE# low during toggle bit polling
tASO
15
ns
Notes:
1.
Typical value for tWHWH1 is 6μs.
2.
Typical value for tWHWH2 is 0.5 sec.
3.
Guaranteed by design, but not tested.
4.
Typical value is 50 sec. The typical chip program time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program
times listed.
TABLE 37 AC CHARACTERISTICS - ALTERNATE CS# CONTROLLED ERASE AND PROGRAM
OPERATIONS
Parameter
Description
Speed Options
Unit
JEDEC
Std
110
120
tVAVAV
tWS
Write Cycle Time (1)
Min
110
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
50
ns
tDVEH
tDS
Data Setup Time
Min
30
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tGHEL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CS# Pulse Width
Min
35
ns
tEHEL
tCPH
CS# Pulse Width High (1)
Min
30
ns
tWHWH1
Programming Operation
Typ
480
μs
tWHWH1
Accelerated Programming Operation
Typ
13.5
μs
tWHWH2
Sector Erase Operation
Typ
0.5
sec
Note:
1.
Not tested.
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